| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2015: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Outline of Final Research Achievements |
It is well know that the channel mobility of SiC MOSFETs is significantly affected by the interface formation processes. In this study, we found that a slight amount of additional oxidation in H2O (wet oxidation) of SiC after a conventional dry oxidation can improve the channel mobility on Si-face significantly, and that the required oxidation thickness to be grown in the wet oxidation is only less than 1nm. It was also clarified that the mobility was most efficiently improved for the case of wet oxidation at low temperature in the ambient with both H2O and O2. From the infrared analysis of the near-interface SiO2 structure in the region within 2 nm from SiC, we found that wet oxidation results in less strained structure than dry oxidation, which suggests the possibility that such structural relaxation would reduce the defect state density in oxide film.
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