| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2015: ¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
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| Outline of Final Research Achievements |
In this work, we performed fundamental study of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration. Here, the diamond MOS structures have been realized by the authors’ proposed highly-thermal stabilization passivation layer and NO2 p-type doping. (1) ALD system was modified and used for insulation layer deposition. (2) From synchrotron radiation X-ray topography, we identified edge- and mix-type dislocations and Frank-type stacking fault, (3) By C-V and conductance measurements, carrier doping using inorganic molecules were investigated, (3) Interface state and fixed charge distribution were investigated using synchrotron X-ray photo emission spectroscopy and photo-excited C-V measurements. (3) Diamond MOS FETs were fabricated and two-dimensional carriers were analyzed.
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