Measurements and analysis of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration
| Project/Area Number |
15H03977
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
Kasu Makoto 佐賀大学, 工学(系)研究科(研究院), 教授 (50393731)
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| Co-Investigator(Kenkyū-buntansha) |
高橋 和敏 佐賀大学, シンクロトロン光応用研究センター, 准教授 (30332183)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2015: ¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
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| Keywords | ダイヤモンド半導体 / ワイドギャップ半導体 / 電子・電気材料 / 電子物性 / 結晶工学 / 電子素子 / ダイヤモンド / MOS構造 / FET |
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| Outline of Final Research Achievements |
In this work, we performed fundamental study of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration. Here, the diamond MOS structures have been realized by the authors’ proposed highly-thermal stabilization passivation layer and NO2 p-type doping. (1) ALD system was modified and used for insulation layer deposition. (2) From synchrotron radiation X-ray topography, we identified edge- and mix-type dislocations and Frank-type stacking fault, (3) By C-V and conductance measurements, carrier doping using inorganic molecules were investigated, (3) Interface state and fixed charge distribution were investigated using synchrotron X-ray photo emission spectroscopy and photo-excited C-V measurements. (3) Diamond MOS FETs were fabricated and two-dimensional carriers were analyzed.
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Report
(4 results)
Research Products
(103 results)
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[Journal Article] Formation of indium-tin oxide ohmic contacts for β-Ga2O32016
Author(s)
T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, M. Kasu
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Journal Title
Japanese Journal of Applied Physics
Volume: 55
Issue: 12
Pages: 1202B7-1202B7
DOI
NAID
Related Report
Peer Reviewed / Open Access
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[Presentation] Diamond FETs for RF Power Electronics; Novel Hole Doping2016
Author(s)
Makoto Kasu
Organizer
8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016)
Place of Presentation
名古屋
Year and Date
2016-03-06
Related Report
Int'l Joint Research / Invited
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