| Project/Area Number |
15H03980
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TERAJI TOKUYUKI 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (50332747)
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| Co-Investigator(Renkei-kenkyūsha) |
KOIDE Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長 (70195650)
WATANABE Kenji 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20343840)
|
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
|
| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2015: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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| Keywords | 電子・電気材料 / 結晶成長 / ダイヤモンド / 不純物制御 / 電子・電気材料工学 |
|---|
| Outline of Final Research Achievements |
In this study, two research items, “ultra-high purity diamond growth” and “ppb-range donor/acceptor control”, were carried out. In the former case, we succeeded to grow high-purity diamond films by suppress incorporation of nitrogen and silicon through modification of diamond growth system. Finally, ultra-high purity diamond plate with nitrogen concentration of 0.08ppb（1.4×1013 cm-3）was successfully grown. In the latter case, we proposed unique growth condition which is based on methane/nitrogen mixture gas with nitrogen concentration is as low as 500ppm.
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