Study on impurity control in an extremely-low concentration range for obtaining highly-functional diamond crystals
Project/Area Number |
15H03980
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | National Institute for Materials Science |
Principal Investigator |
TERAJI TOKUYUKI 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (50332747)
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Co-Investigator(Renkei-kenkyūsha) |
KOIDE Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長 (70195650)
WATANABE Kenji 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20343840)
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Project Period (FY) |
2015-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2015: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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Keywords | 電子・電気材料 / 結晶成長 / ダイヤモンド / 不純物制御 / 電子・電気材料工学 |
Outline of Final Research Achievements |
In this study, two research items, “ultra-high purity diamond growth” and “ppb-range donor/acceptor control”, were carried out. In the former case, we succeeded to grow high-purity diamond films by suppress incorporation of nitrogen and silicon through modification of diamond growth system. Finally, ultra-high purity diamond plate with nitrogen concentration of 0.08ppb(1.4×1013 cm-3)was successfully grown. In the latter case, we proposed unique growth condition which is based on methane/nitrogen mixture gas with nitrogen concentration is as low as 500ppm.
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Report
(4 results)
Research Products
(73 results)
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[Journal Article] Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond2017
Author(s)
T. Kageura, K. Kato, H. Yamano, E. Suaebah, M. Kajiya, S. Kawai, M. Inaba, T. Tanii, M. Haruyama, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, S. Kono, and H. Kawarada
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Journal Title
Appl.Phys.Express
Volume: 10
Issue: 5
Pages: 0555031-4
DOI
NAID
Related Report
Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification2017
Author(s)
H. Yamano, S. Kawai, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, and H. Kawarada
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Journal Title
Jpn. J. Appl. Phys.
Volume: 56
Issue: 4S
Pages: 04CK08-04CK08
DOI
NAID
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond2016
Author(s)
P. Jamonneau, M. Lesik, J. P. Tetienne, I. Alvizu, L. Mayer, A. Dreau, S. Kosen, J.-F. Roch, S. Pezzagna, J. Meijer, T. Teraji, Y. Kubo, P. Bertet, J. R. Maze, and V. Jacques
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Journal Title
Phys. Rev. B
Volume: 93
Issue: 2
Pages: 0243051-5
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond2015
Author(s)
Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E Wu, and Heping Zeng
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Journal Title
Sci. Rep.
Volume: 5
Issue: 1
Pages: 122441-9
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Journal Article] Homoepitaxial diamond film growth: High purity, high crystalline quality,isotopic enrichment, and single color center formation2015
Author(s)
Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya, Shinobu Onoda, Takeshi Ohshima, Lachlan J. Rogers, Fedor Jelezko, Philipp Neumann
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Journal Title
Phys. Status Solidi A
Volume: 212
Issue: 11
Pages: 2365-2384
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Investigation of the silicon vacancy color center for quantum key distribution2015
Author(s)
Yan Liu, Petr Siyushev, Youying Rong, Botao Wu, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Heping Zeng, and E Wu
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Journal Title
Opt. Exp.
Volume: 23
Issue: 26
Pages: 32961-32967
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Presentation] NV Centers in Diamond Used for Detection of Single Ion Track2015
Author(s)
Moriyoshi Haruyama, Shinobu Onoda, Tokuyuki Teraji, Junichi Isoya, Wataru Kada, Takeshi Ohshima, Osamu Hanaizumi
Organizer
The 11th Intrernational Workshop on Radiation Effects on Semicoductor Devices for Space Applications (11th RASEDA)
Place of Presentation
City Performing Arts Center, Kiryu, Gunnma, Japan
Year and Date
2015-11-12
Related Report
Int'l Joint Research
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[Presentation] Diamond surface fluorescence for device sensing2015
Author(s)
Masafumi Inaba, Hayate Yamano, Kanami Kato, Taisuke Kageura, M. Shibata, Shinobu Onoda, Tokuyuki Teraji, Junichi Isoya,Takashi Tanii, Hiroshi Kawarada
Organizer
Diamond surface fluorescence for device sensing
Place of Presentation
Kagawa International Conference Hall, Takamatsu, Japan
Year and Date
2015-08-05
Related Report
Int'l Joint Research
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