| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Outline of Final Research Achievements |
In this research, we successfully developed a new Fe-doped p-type ferromagnetic semiconductor (Ga,Fe)Sb and a new n-type ferromagnetic semiconductor (In,Fe)Sb, which are necessary for fabrication of semiconductor spin devices. Furthermore, we demonstrated intrinsic ferromagnetism in both materials at room-temperature. Using Fe-doped ferromagnetic semiconductors, we fabricated spin diodes and spin transistors, and investigated their spin-dependent transport characteristics. In an Esaki spin-diode structure of n-(In,Fe)As/p-InAs, we observed the spin-split conduction band of (In,Fe)As for the first time by using the tunneling spectroscopy method. We also fabricated field-effect transistors with an (In,Fe)As quantum well, and electrically control the Curie temperature of the (In,Fe)As quantum well using the wave function engineering method. Our results provide an approach for versatile, low power, and ultrafast manipulation of magnetization.
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