Research on semiconductor spin devices with ferromagnetic semiconductors
| Project/Area Number |
15H03988
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
PHAM NAM HAI 東京工業大学, 工学院, 准教授 (50571717)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Keywords | 強磁性半導体 / スピンダイオード / スピントランジスタ / スピンバルブ効果 / スピンデバイス / ナノ構造 |
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| Outline of Final Research Achievements |
In this research, we successfully developed a new Fe-doped p-type ferromagnetic semiconductor (Ga,Fe)Sb and a new n-type ferromagnetic semiconductor (In,Fe)Sb, which are necessary for fabrication of semiconductor spin devices. Furthermore, we demonstrated intrinsic ferromagnetism in both materials at room-temperature. Using Fe-doped ferromagnetic semiconductors, we fabricated spin diodes and spin transistors, and investigated their spin-dependent transport characteristics. In an Esaki spin-diode structure of n-(In,Fe)As/p-InAs, we observed the spin-split conduction band of (In,Fe)As for the first time by using the tunneling spectroscopy method. We also fabricated field-effect transistors with an (In,Fe)As quantum well, and electrically control the Curie temperature of the (In,Fe)As quantum well using the wave function engineering method. Our results provide an approach for versatile, low power, and ultrafast manipulation of magnetization.
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Report
(4 results)
Research Products
(70 results)
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[Journal Article] Magnetization process of the n-type ferromagnetic semiconductor (In,Fe)As:Be studied by x-ray magnetic circular dichroism2016
Author(s)
S. Sakamoto, L. D. Anh, P. N. Hai, G. Shibata, Y. Takeda, M. Kobayashi, Y. Takahashi, T. Koide, M. Tanaka, and A. Fujimori
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Journal Title
Phys. Rev. B
Volume: 93
Issue: 3
Pages: 1-6
DOI
NAID
Related Report
Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
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[Presentation] n型強磁性半導体(In,Fe)Asの電子構造に対するBe添加効果2017
Author(s)
小林 正起, 木内 久雄, 丹羽 秀治, 宮脇 淳, 藤森 淳, Le Duc Anh, Pham Nam Hai, 田中 雅明, 尾嶋正治, 原田慈久
Organizer
2017年 日本物理学会 秋季大会
Related Report
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[Presentation] Electronic Structure of the p-type Ferromagnetic Semiconductor (Ga,Fe)Sb2016
Author(s)
Shoya Sakamoto, Thanh Tu Nguyen, Yukiharu Takeda, Shin-ichi Fujimori, Nam Hai Pham, Duc Anh Le, Yuki Wakabayashi, Goro Shibata, Masafumi Horio, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori
Organizer
第77回応用物理学会秋季学術講演会
Place of Presentation
朱鷺メッセ、新潟
Year and Date
2016-09-13
Related Report
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[Presentation] Spin transport in nanoscale silicon channels2016
Author(s)
Duong Dinh Hiep, Masaaki Tanaka, Pham Nam Hai
Organizer
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9)
Place of Presentation
Kobe international conference center
Year and Date
2016-08-08
Related Report
Int'l Joint Research
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