| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2017: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
The properties of shallow impurities in nanoscale semiconductors were thoroughly evaluated and it is demonstrated that the ionization energy of shallow impurities is larger as the size of nanoscale semiconductors shrinks. In Si nanosheet, the enhancement of ionization energy and an increase in critical doping concentration were experimentally confirmed. In Si nanowire, the impurity level was numerically obtained. Furthermore, the characteristics of Si nanowire tunneling FETs were investigated with respect to the radial impurity position dependence. In addition, thermal conductivity of Al2O3 deposited by atomic-layer deposition technique was studied. It is shown that the thermal conductivity is enhanced by thermal annealing. The information of the thermal conductivity will be used to further enhance the performance of Si nanowire transistors.
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