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Design Guideline for High-Performance Si Nano-wire Transistor by Optimization of Thermal and Impurity Properties

Research Project

Project/Area Number 15H03997
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionKeio University

Principal Investigator

Uchida Ken  慶應義塾大学, 理工学部(矢上), 教授 (30446900)

Project Period (FY) 2015-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2017: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Keywordsナノ構造 / 不純物 / イオン化エネルギー / 量子効果 / 誘電率 / 熱伝導率測定 / ナノデバイス / トランジスタ / 熱輸送 / 量子閉じ込め
Outline of Final Research Achievements

The properties of shallow impurities in nanoscale semiconductors were thoroughly evaluated and it is demonstrated that the ionization energy of shallow impurities is larger as the size of nanoscale semiconductors shrinks. In Si nanosheet, the enhancement of ionization energy and an increase in critical doping concentration were experimentally confirmed. In Si nanowire, the impurity level was numerically obtained. Furthermore, the characteristics of Si nanowire tunneling FETs were investigated with respect to the radial impurity position dependence. In addition, thermal conductivity of Al2O3 deposited by atomic-layer deposition technique was studied. It is shown that the thermal conductivity is enhanced by thermal annealing. The information of the thermal conductivity will be used to further enhance the performance of Si nanowire transistors.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • Research Products

    (10 results)

All 2018 2017 2016 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results,  Open Access: 2 results,  Acknowledgement Compliant: 3 results) Presentation (4 results) (of which Int'l Joint Research: 2 results,  Invited: 1 results) Remarks (2 results)

  • [Journal Article] Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors2018

    • Author(s)
      T. Tanaka and K. Uchida
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57

    • NAID

      210000149147

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique2016

    • Author(s)
      T. Takahashi, T. Matsuki, T. Shinada, Y. Inoue, and K. Uchida
    • Journal Title

      IEEE J. Electron Devices Soc.

      Volume: 4 Issue: 5 Pages: 365-373

    • DOI

      10.1109/jeds.2016.2568261

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Experimental Study on Deformation Potential (Dac) in MOSFETs: Demonstration of Increased Dac at MOS Interfaces and Its Impact on Electron Mobility2016

    • Author(s)
      T. Ohashi, T. Tanaka, T. Takahashi, S. Oda, and K. Uchida
    • Journal Title

      IEEE J. Electron Devices Soc.

      Volume: 4 Issue: 5 Pages: 278-285

    • DOI

      10.1109/jeds.2016.2581217

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Deionization of dopants in silicon nanofilms even with donor concentration of greater than 1E19 cm-32016

    • Author(s)
      T. Tanaka, Y. Kurosawa, N. Kadotani, T. Takahashi, S. Oda, and K. Uchida
    • Journal Title

      Nano Letters

      Volume: 16 Issue: 2 Pages: 1143-1149

    • DOI

      10.1021/acs.nanolett.5b04406

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] ナノワイヤ中の不純物によるバンドテールがトンネルFETに与える影響の解析2018

    • Author(s)
      田中貴久,内田建
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Numerical analysis of band tailing and electron transport near conduction band edge in doped Si nanowires2017

    • Author(s)
      T. Tanaka and K. Uchida
    • Organizer
      The 30th International Microprocess and Nanotechnology Conference
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 誘電率ミスマッチによる高ドープ Si 薄膜中の不純物のイオン化エネルギー上昇の解析2016

    • Author(s)
      田中貴久,高橋綱己,内田建
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Thermal-Aware CMOS: Challenges for Future Technology and Design Evolution2016

    • Author(s)
      K. Uchida
    • Organizer
      European Solid-State Device Research Conference (ESSDER)
    • Place of Presentation
      Lausanne, Switzerland
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Remarks] 内田研究室Webページ

    • URL

      http://www.ssn.elec.keio.ac.jp

    • Related Report
      2016 Annual Research Report
  • [Remarks] 慶應義塾大学 内田研究室

    • URL

      http://www.ssn.elec.keio.ac.jp

    • Related Report
      2015 Annual Research Report

URL: 

Published: 2015-04-16   Modified: 2019-03-29  

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