| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2019: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
|
|---|
| Outline of Final Research Achievements |
The goals of this proposal are three, 1) realization of a qubit by electron spin / nuclear spin degrees of freedom of DB defects in MOSFET, 2) control of the number, position and level energy of defects, 3) Theoretical study of technology for coupling between qubits existing in two MOSFETs. The research was carried out while changing the original DB defect into a deep impurity and the MOSFET into TFET (a type of MOSFET). Not only has Goal 1) been achieved, but qubit operation has been achieved at a temperature of 10 Kelvin, which is two orders of magnitude higher than before. Moreover, the density and level energy can be controlled by using deep impurities, and the target 2) was almost achieved. Regarding 3), not only did we proceed with theoretical research, but we were also able to carry out preliminary experiments.
|
