| Project/Area Number |
15H04113
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Tohoku University |
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Principal Investigator |
Sutou Yuji 東北大学, 工学研究科, 准教授 (80375196)
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| Co-Investigator(Renkei-kenkyūsha) |
KOIKE Junichi 東北大学, 未来科学技術共同研究センター, 教授 (10261588)
ANDO Daisuke 東北大学, 大学院工学研究科, 助教 (50615820)
KOBAYASHI Keisuke (SAITO Yuta) 高知工科大学, 総合研究所, 客員教授 (50372149)
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| Research Collaborator |
SONG Yun-Heub
SHINDO Satoshi
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Keywords | 相変化メモリ / 不揮発性メモリ / アモルファス / 結晶 / 接触抵抗 / 表面・界面物性 / 電子・電気材料 / 金属物性 / 電極材料 / 結晶化 |
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| Outline of Final Research Achievements |
With the scaling down of PCRAM cells, contact resistance between phase change material (PCM) and an electrode becomes a dominant factor in determining the memory cell resistance. In this study, we investigated the contact resistivity of PCM to a metal electrode. Then, we discussed the effect of the contact resistivity on the performance of the memory cell.
We found that an amorphous Cu2GeTe3 (CGT)/W contact shows schottky conduction, i.e., a CGT/W is dominated by interface conduction. Moreover, we found new PCM, Cr2Ge2Te6 (CrGT) with a high thermal stability in amorphous state. The CrGT showed inverse resistance change upon phase change (Ramo<Rcry). Although the resistivity change of the CrGT was only one order of magnitude, the contact resistivity change was found to reach two orders of magnitude upon phase change. I was also found that the CrGT memory cell achieves more than an 85% reduction in total operation energy compared with a conventional GST memory cell.
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