| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2017: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
In this study, we aimed to establish a fundamental technology for the solar-cell application of polycrystalline silicon films formed through explosive crystallization taking place during flash lamp annealing of electron-beam-evaporated amorphous silicon films. We have found that the starting points of explosive crystallization can be controlled by intentionally forming thick parts in precursor amorphous silicon films. We have also demonstrated the possibility of forming a polycrystalline silicon film on textured glass substrates and the availability of a structure in which a silicon nitride film was inserted, through which a guideline for the fabrication of high efficiency solar cells has been obtained.
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