| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2018: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Outline of Final Research Achievements |
A highly mismatched ZnTeO has a narrow O-derived intermediate band located well below the conduction band edge of the ZnTe, and therefore it is a promising absorber material for intermediate band solar cells (IBSCs). This study was performed to improve the carrier generation efficiency via the intermediate band and the extraction efficiency of excited carriers, which are the keys to achieve high efficiency in ZnTeO-based IBSCs. As a result, we proved that a donor doping is effective for promoting the two-step photon absorption. Also, we demonstrated the epitaxial growth of ZnCdTeO alloy layers which is necessary to form a graded band gap structure and clarified basic properties.
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