| Budget Amount *help |
¥22,620,000 (Direct Cost: ¥17,400,000、Indirect Cost: ¥5,220,000)
Fiscal Year 2017: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2016: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2015: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
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| Outline of Final Research Achievements |
Soft X-ray light source have been used for various applications, such as extreme-ultraviolet(EUV) light sources (wavelength 13.5 nm) for next-generation semiconductor lithography system and water-window light sources (wavelength 2.3-4.4 nm), Laser-produced plasma is an attractive candidate for the Sof X-ray light source, because the plasma can be easily produced by table-top laser system. In order to optimize the plasma as the soft-X-ray light sources, to measure and control fundamental plasma parameters, such as averaged ionic charge state (Z), electron density (ne), and electron temperature (Te) are prerequisite. We have developed a new measurement system to obtain these plasma parameters. In our system, both ion and electron feature spectra of collective Thomson scattering have been observed simultaneously. From these spectra, it is possible to determine Z, ne, and Te.
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