| Budget Amount *help |
¥24,310,000 (Direct Cost: ¥18,700,000、Indirect Cost: ¥5,610,000)
Fiscal Year 2017: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
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| Outline of Final Research Achievements |
On-demand electronic property control of oxide thin films was demonstrated by using an all-solid-state thin-film transistor (TFT) structure with water-electrolysis. The TFT structure was fabricated on vanadium dioxide (VO2) channel with a gate insulator of water-infiltrated nanoporous glass. Alternative positive/negative gate-voltage applications induced the reversible protonation/deprotonation of VO2 channel, leading to reversible metal-insulator conversion at room temperature. The TFT structure was applied for VO2 polycrystalline film on glass substrate and it is succeeded to demonstrate the electrochromic device that reversibly modulates from infrared (IR) transparent insulator to IR opaque metal state. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus this concept will provide a new approach for the development of new functional devices.
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