| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Outline of Final Research Achievements |
Amorphous oxide semiconductor (AOS) is relatively new functional material compared with amorphous Si, crystalline ZnO etc. Since AOS has amorphous structure (i.e., non-order) and several components such as In, Ga, Zn and O, it seems hard to figure out the defect species and the mechanism of instability due to the complexity of structure.
In this study, we carefully choose the effective method on AOS, like HAADF-STEM, thermal desorption spectroscopy, in-situ ellipsometory, Hard X-ray spectroscopy and so on. As a result, we succeeded to figure out the chemical states of excess oxygen in AOS and the effects of hydrogen on sugbap defect states. Finally, we obtain new functional AOS materials, e.g. AOS phosphor and ultra-wide bandgap AOS.
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