Bistability/instability of amorphous oxide semiconductor, and its application development

• Project/Area Number: 15H06207
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Structural/Functional materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: KEISUKE IDE 東京工業大学, 科学技術創成研究院, 助教 (70752799)
• Project Period (FY): 2015-08-28 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: アモルファス酸化物半導体 / 弱結合酸素 / 不純物水素 / 膜構造 / 微細構造 / 半導体物性 / 先端機能デバイス / セラミックス / a-IGZO / 過剰酸素

Outline of Final Research Achievements

Amorphous oxide semiconductor (AOS) is relatively new functional material compared with amorphous Si, crystalline ZnO etc. Since AOS has amorphous structure (i.e., non-order) and several components such as In, Ga, Zn and O, it seems hard to figure out the defect species and the mechanism of instability due to the complexity of structure.
In this study, we carefully choose the effective method on AOS, like HAADF-STEM, thermal desorption spectroscopy, in-situ ellipsometory, Hard X-ray spectroscopy and so on. As a result, we succeeded to figure out the chemical states of excess oxygen in AOS and the effects of hydrogen on sugbap defect states. Finally, we obtain new functional AOS materials, e.g. AOS phosphor and ultra-wide bandgap AOS.

Research Products

• [Journal Article] Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO3 (2017)
  • Author(s): C.A. Niedermeier, S. Rhode, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya and M.A. Moram
  • Journal Title: Phys. Rev. B Volume: 95 Issue: 16 Pages: 161202-161202
  • DOI: 10.1103/physrevb.95.161202
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor (2017)
  • Author(s): J. Kim, T. Sekiya, N. Miyokawa, N. Watanabe, K. Kimoto, K. Ide, Y. Toda, S. Ueda, N. Ohashi, H. Hiramatsu, H. Hosono and T. Kamiya,
  • Journal Title: NPG Asia Materials Volume: 9 Issue: 3 Pages: e359-e359
  • DOI: 10.1038/am.2017.20
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Multiple roles of hydrogen treatments in amorphous InGaZnO films (2017)
  • Author(s): H. Tang, Y. Kishida, K. Ide, Y. Toda, H. Hiramatsu, S. Matsuishi, S. Ueda, N. Ohashi, H. Kumomi, H. Hosono and T. Kamiya
  • Journal Title: ECS J. Solid State Sci. Technol. Volume: 6 Issue: 7 Pages: 365-372
  • DOI: 10.1149/2.0071707jss
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Quantitative Analysis and Deconvolution of Subgap States in Amorphous In-Ga-Zn-O (2017)
  • Author(s): K. Ide, Y. Kishida, S. Ueda, N. Ohashi, H. Hiramatsu, H. Hosono and T. Kamiya
  • Journal Title: SID Int. Symp. Dig. Tech. Pap. Volume: 印刷中
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors (2017)
  • Author(s): K. Ide, M. Kikuchi, M. Ota, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono and T. Kamiya
  • Journal Title: Jpn. J. Appl. Phys. Volume: 56 Issue: 3S Pages: 03BB03-03BB03
  • DOI: 10.7567/jjap.56.03bb03
  • NAID: 210000147499
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Electronic Structures of Various Color Light-Emitting Amorphous Oxide Semiconductor Thin Films (2017)
  • Author(s): Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
  • Journal Title: SID Int. Symp. Dig. Tech. Pap. Volume: 印刷中
  • Peer Reviewed
• [Journal Article] Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen (2016)
  • Author(s): C. A. Niedermeier, S. Rhode, S. Fearn, K. Ide, M. A. Moram, H. Hiramatsu, H. Hosono, and T. Kamiya
  • Journal Title: Appl. Phys. Lett. Volume: 108 Issue: 17 Pages: 172101-172101
  • DOI: 10.1063/1.4948355
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] SnS films prepared by H2S-free process and its p-type thin film transistor (2016)
  • Author(s): F.-Y. Ran, Z. Xiao, H. Hiramatsu, K. Ide, H. Hosono, and T. Kamiya
  • Journal Title: AIP Adv. Volume: 6 Issue: 1 Pages: 015112-015112
  • DOI: 10.1063/1.4940931
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor (2016)
  • Author(s): J. Kim, N. Miyokawa, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and *T. Kamiya
  • Journal Title: AIP Adv. Volume: 6 Issue: 1 Pages: 015106-015106
  • DOI: 10.1063/1.4939939
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu (2016)
  • Author(s): J. Kim, N. Miyokawa, K. Ide, H. Hiramatsu, H. Hosono, and T. Kamiya
  • Journal Title: Journal of the Ceramic Society of Japan Volume: 124 Issue: 5 Pages: 532-535
  • DOI: 10.2109/jcersj2.15283
  • NAID: 130005149944
  • ISSN: 1348-6535, 1882-0743
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Ultra wide bandgap amorphous oxide semiconductor, Ga-Zn-O (2016)
  • Author(s): J. Kim, N. Miyokawa, T. Sekiya, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya
  • Journal Title: Thin Solid Films Volume: 614 Pages: 84-89
  • DOI: 10.1016/j.tsf.2016.03.003
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors (2016)
  • Author(s): H. Tang, K. Ide, H. Hiramatsu, S. Ueda, N. Ohashi, H. Kumomi, H. Hosono, and T. Kamiya
  • Journal Title: Thin Solid Films Volume: 614 Pages: 73-78
  • DOI: 10.1016/j.tsf.2016.03.005
  • Peer Reviewed
• [Journal Article] Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films (2016)
  • Author(s): K. Ide, M. Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono and T. Kamiya
  • Journal Title: AM-FPD 2016 Volume: - Pages: 298-301
  • DOI: 10.1109/am-fpd.2016.7543696
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films (2015)
  • Author(s): 5.Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, and Toshio Kamiya
  • Journal Title: J. Appl. Phys. Volume: 118 Issue: 20
  • DOI: 10.1063/1.4936552
  • Peer Reviewed
• [Presentation] Importance of oxygen- and hydrogen-related defects to develop new amorphous oxide semiconductor materials (2016)
  • Author(s): Toshio Kamiya, Junghwan Kim, Keisuke Ide, Hideya Kumomi, Hideo Hosono
  • Organizer: The 23rd International Conference on Display Workshops in conjunction with Asia Display2016
  • Place of Presentation: 福岡国際会議場
  • Year and Date: 2016-12-07
  • Int'l Joint Research / Invited
• [Presentation] Development of New Amorphous Oxide Semiconductors: How to understand and control their defects? (2016)
  • Author(s): Toshio Kamiya, Keisuke Ide, Hideya Kumomi, and Hideo Hosono:
  • Organizer: International Conference on Electronic Materials and Nanotechnology for Green Evironment (ENGE 2016)
  • Place of Presentation: Ramada Plaza Jeju Hotel, Jeju, Korea
  • Year and Date: 2016-11-06
  • Int'l Joint Research / Invited
• [Presentation] What have been clarified for defects in a-In-Ga-Zn-O and what we can obtain?; (2016)
  • Author(s): Toshio Kamiya, Keisuke Ide, Hideya Kumomi, and Hideo Hosono
  • Organizer: The 16th Meeting on Information Display
  • Place of Presentation: ICC Jeju, Korea
  • Year and Date: 2016-08-23
  • Int'l Joint Research / Invited
• [Presentation] Light-emission Properties and Electronic Structure of Amorphous Oxide Thin film Phosphor; (2016)
  • Author(s): Naoto Watanabe, Junghwan Kim, keisuke Ide, Hiramatsu Hidenori, Hideo Hosono, and Toshio Kamiya:
  • Organizer: The 16th Meeting on Information Display (iMiD2016)
  • Place of Presentation: ICC Jeju, Korea
  • Year and Date: 2016-08-23
  • Int'l Joint Research
• [Presentation] : Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films; (2016)
  • Author(s): K. Ide, M. Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono and T. Kamiya:
  • Organizer: THE 23rd INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: Ryukoku University Avanti Kyoto Hall
  • Year and Date: 2016-08-06
  • Int'l Joint Research
• [Presentation] Effect of weakly-bonded oxygen on subgap states in amorphous In-Ga-Zn-O and its chemical states (2016)
  • Author(s): Keisuke Ide, H. Hiramatsu, S. Ueda, N. Ohashi, H. Kumomi, H. Hosono, and T. Kamiya
  • Organizer: International Thin-Film Transistor Conference
  • Place of Presentation: Ｔａｉｗａｎ
  • Year and Date: 2016-02-25
  • Int'l Joint Research
• [Presentation] Multi-step Annealing to Control Weakly-bonded Oxygen in a-IGZO Films and TFTs (2016)
  • Author(s): Yosuke Kishida, Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideo Hosono, and Toshio Kamiya
  • Organizer: International Thin-Film Transistor Conference
  • Place of Presentation: Ｔａｉｗａｎ
  • Year and Date: 2016-02-25
  • Int'l Joint Research
• [Presentation] Competition of Oxygen and Hydrogen: A Key to Developing New Amorphous Oxide Semiconductors (2016)
  • Author(s): Toshio Kamiya, Keisuke Ide, Hideya Kumomi, and Hideo Hosono
  • Organizer: International Thin-Film Transistor Conference
  • Place of Presentation: Ｔａｉｗａｎ
  • Year and Date: 2016-02-25
  • Int'l Joint Research / Invited
• [Presentation] 超ワイドバンドギャップアモルファス酸化物半導体の欠陥制御と光・電子デバイス応用 (2016)
  • Author(s): 金 正煥、関谷 拓実、井手 啓介、平松 秀典、細野 秀雄、神谷 利夫:
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟
  • Invited
• [Presentation] ペロブスカイト型酸化物半導体固溶体の結晶構造と光学物性 (2016)
  • Author(s): 小林雄太郎、溝口拓、井手啓介、金正煥、松石聡、平松秀典、細野秀雄、神谷利夫:
  • Organizer: 日本セラミックス協会 第29回秋季シンポジウム
  • Place of Presentation: 広島大学 東広島キャンパス
• [Presentation] アモルファスIGZOにおける弱結合酸素の電子状態解析; (2016)
  • Author(s): 岸田 陽介、井手 啓介、上田 茂典、平松 秀典、大橋 直樹、細野 秀雄、神谷 利夫:
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟
• [Presentation] アモルファス酸化物蛍光体薄膜の多色化と電子構造; (2016)
  • Author(s): 渡邉 脩人、Kim Junghwan、井手 啓介、平松 秀典、細野 秀雄、神谷 利夫:
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟
• [Presentation] Doping and Charge Compensation in Amorphous Oxide Semiconductors (2015)
  • Author(s): Toshio Kamiya, Keisuke Ide, Hideya Kumomi and Hideo Hosono
  • Organizer: 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
  • Place of Presentation: Tokyo
  • Year and Date: 2015-11-02
  • Int'l Joint Research / Invited
• [Presentation] a-In-Ga-Zn-Oにおける過剰酸素の化学結合状態とその欠陥準位 (2015)
  • Author(s): 井手啓介、小林雄太郎、平松秀典、上田茂典、大橋直樹、雲見日出也、細野秀雄、神谷利夫
  • Organizer: 薄膜材料デバイス研究会 第12回研究集会
  • Place of Presentation: 京都
  • Year and Date: 2015-10-30
• [Presentation] Chemical states of weakly-bonded oxygens in amorphous In-Ga-Zn-O film and their effects on TFT (2015)
  • Author(s): Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
  • Organizer: The 9th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics
  • Place of Presentation: Tukuba
  • Year and Date: 2015-10-19
  • Int'l Joint Research
• [Presentation] Effects of Thermal Anealing on Elimination of Deep Defects in Amorphous In-Ga-Zn-O Thin-Film Transistors (2015)
  • Author(s): Hao-Chun Tang, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, and Toshio Kamiya
  • Organizer: The 9th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics
  • Place of Presentation: Tukuba
  • Year and Date: 2015-10-19
  • Int'l Joint Research
• [Remarks] 細野神谷平松研究室
  • URL: http://www.msl.titech.ac.jp/~hosono/