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光子モード制御を用いたEu添加GaN赤色LEDの高輝度化

Research Project

Project/Area Number 15J00887
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

稲葉 智宏  大阪大学, 工学研究科, 特別研究員(DC1)

Project Period (FY) 2015-04-24 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2017: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2016: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2015: ¥1,200,000 (Direct Cost: ¥1,200,000)
KeywordsEu添加GaN / 希土類添加半導体 / 微小光共振器 / ユーロピウム / 窒化ガリウム / 微小共振器
Outline of Annual Research Achievements

本年度は①「Eu添加GaNの発光メカニズムの解明」と、②「微小共振器を用いたEu添加GaN赤色LEDの発光強度増大とそのメカニズムの解明」に取り組んだ。具体的な内容を以下に示す。
① Eu添加GaNの発光強度を増大させる指針を得るためには、発光メカニズムに対する深い理解が不可欠である。前年度、通常は解析されない時間分解フォトルミネッセンスの立ち上がり成分に注目し、Eu添加GaNの発光メカニズムに基づいた解析式を導出・適用することでエネルギー輸送過程の解明に成功した。また、解析で得られた値より、Euの発光遷移確率(W_Eu)が発光過程のボトルネックであることが判明した。
今年度は、成長条件を変化させた試料の解析を行うことで、Eu添加GaNの発光メカニズムのさらに詳細な理解を試みた。その結果、Eu添加GaNの発光効率と発光強度は、GaNからEuへのエネルギー輸送レート、GaN母体での非輻射遷移レート、Eu発光サイト数、W_Euなどにより決定されることを、初めて定量的に明らかにした。
② 微小共振器中では光の状態密度が変調されることで、発光遷移確率や発光の結合モード定数の増大が期待される。そこで、前年度は導電性AlInN/GaN DBRの成長条件を確立し、微小共振器構造を有するLEDを作製した結果、4.6倍の積分発光強度増大に成功した。
そこで今年度は、微小共振器構造を有するLEDに対して詳細な解析を行った。結果として、GaNと空気界面の臨界角以下の発光成分が増大したために、光取り出し効率が向上したことが確認された。これは、時間領域有限差分法による計算結果とも、定性的に一致した。積分発光強度は4.6倍の増大、発光遷移確率は1.06倍の増大であったため、光取り出し効率は4.3倍の増大に成功した。

Research Progress Status

29年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

29年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • Research Products

    (52 results)

All 2018 2017 2016 2015

All Journal Article (3 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 3 results,  Open Access: 2 results,  Acknowledgement Compliant: 2 results) Presentation (48 results) (of which Int'l Joint Research: 20 results,  Invited: 6 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy2018

    • Author(s)
      T. Inaba, T. Kojima, G. Yamashita, E. Matsubara, B. Mitchell, R. Miyagawa, O. Eryu, J. Tatebayashi, M. Ashida, and Y. Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 123

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Emission enhancement and its mechanism of Eu-doped GaN by strain engineering2017

    • Author(s)
      T. Inaba, B. Mitchell, A.Koizumi, and Y. Fujiwara
    • Journal Title

      Optical Materials Express

      Volume: 7 Pages: 1381-1387

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity2016

    • Author(s)
      T. Inaba, D. Lee, R. Wakamatsu, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, A.Koizumi, and Y. Fujiwara
    • Journal Title

      AIP Advances

      Volume: 6 Issue: 4 Pages: 045105-045105

    • DOI

      10.1063/1.4946849

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] Exploring the non-light emission process in semiconductor with light for more efficient LED2018

    • Author(s)
      T. Inaba, J. Tatebayashi, and Y. Fujiwara
    • Organizer
      10th Hope Meeting with Nobel Laureates
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Demonstration of red vertical microcavity LEDs with Eu-doped GaN as an active layer2018

    • Author(s)
      K. Shiomi, T. Inaba, J. Tatebayashi, and Y. Fujiwara
    • Organizer
      21th SANKEN International, The 16th SANKEN Nanotechnology Symposium, 5th KANSAI Nanoscience and Nanotechnology, 13th Handai Nanoscience and Nanotechnology International Symposium
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Eu添加GaNを用いたマイクロディスクの作製とEu発光特性評価2018

    • Author(s)
      佐々木豊、稲葉智宏、舘林潤、藤原康文
    • Organizer
      第65回 応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Eu添加GaN微小レーザ実現に向けたマイクロディスク構造の作製とEu発光特性の評価2018

    • Author(s)
      佐々木豊、稲葉智宏、舘林潤、藤原康文
    • Organizer
      日本材料学会平成29年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaN:Eu赤色LEDの発光ゆらぎ:インタラクティブな発光過程の解析2017

    • Author(s)
      石井真史, 稲葉智宏, 藤原康文
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市西区)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] GaN系ナノ光デバイスに向けたAlInNの厚膜成長2017

    • Author(s)
      稲葉智宏, 児島貴徳, 藤原康文
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市西区)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 局在表面プラズモンによるEu添加GaN赤色LEDの発光強度増大2017

    • Author(s)
      山田智也, 稲葉智宏, 児島貴徳, 藤原康文
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市西区)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 母体結晶のノンスピンバス化を目指したエルビウム添加酸化セリウムのMBE成長2017

    • Author(s)
      稲葉智宏, 俵毅彦, 尾身博雄, 山本秀樹, 後藤秀樹
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市西区)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 銀ナノ粒子との表面プラズモン結合によるEu添加GaN赤色LEDの発光強度増大2017

    • Author(s)
      山田智也, 稲葉智宏, 児島貴徳, 藤原康文
    • Organizer
      日本材料学会平成28年度第4回半導体エレクトロニクス部門委員会第1回講演会
    • Place of Presentation
      鳥取大学鳥取キャンパス(鳥取県鳥取市)
    • Year and Date
      2017-01-28
    • Related Report
      2016 Annual Research Report
  • [Presentation] Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2017

    • Author(s)
      Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Kojima, and T. Gregorkiewicz
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Temperature-modulation epitaxial growth of thick AlInN layer for fabrication of GaN-based nano-scale photonic devices2017

    • Author(s)
      T. Inaba, T. Kojima, and Y. Fujiwara
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Quantitative evaluation of energy transfer efficiency for Eu-doped GaN grown at different V/III ratios2017

    • Author(s)
      T. Inaba, T. Kojima, G Yamashita, M. Ashida, and Y. Fujiwara
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Repeated emission of Eu by multi-path energy transfer from defects in GaN:Eu red LED2017

    • Author(s)
      M. Ishii, T. Inaba, and Y. Fujiwara
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhancement of Eu emission in Eu-doped GaN red LED by localized surface plasmon2017

    • Author(s)
      T. Yamada, T. Inaba, T. Kojima, and Y. Fujiwara
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth And Optical Characterization Of Erbium-doped Cerium Oxide As A Magnetically Purified Host Crystal2017

    • Author(s)
      T. Tawara, T. Inaba, H. Omi, H. Yamamoto, and H. Gotoh
    • Organizer
      CLEO-PR 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhanced light output from Eu-doped GaN red LED by a microcavity2017

    • Author(s)
      T. Inaba, K. Shiomi, T. Kojima, and Y. Fujiwara
    • Organizer
      11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 発光遷移確率の制御によるEu,O共添加GaNのEu発光強度増大2017

    • Author(s)
      稲葉智宏、児島貴徳、藤原康文
    • Organizer
      第9回窒化物半導体結晶成長講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 温度変調エピタキシャル法を用いた高品質AlInNの厚膜成長2017

    • Author(s)
      稲葉智宏、児島貴徳、藤原康文
    • Organizer
      日本結晶成長学会第40回結晶成長討論会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 時間分解PLの初期信号解析によるEu添加GaNの発光メカニズムの解明2017

    • Author(s)
      稲葉智宏、児島貴徳、舘林潤、山下元気、松原英一、芦田昌明、藤原康文
    • Organizer
      第78回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 有機金属気相エピタキシャル法により作製したTm添加AlGaNからの狭帯域青色発光2017

    • Author(s)
      藤諒健、高津潤一、稲葉智宏、舘林潤、藤原康文
    • Organizer
      第78回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Eu添加GaNを発光層にした赤色垂直微小共振器LEDの実現2017

    • Author(s)
      稲葉智宏、塩見圭史、児島貴徳、舘林潤、藤原康文
    • Organizer
      第78回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 薄膜p-GaN上金属ナノ粒子によるEu添加GaN LED構造の発光強度増大2017

    • Author(s)
      山田智也、稲葉智宏、舘林潤、藤原康文
    • Organizer
      第78回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Enhancement of Eu emission intensity in Eu doped GaN by silver nanoparticles on thin p-GaN layer2017

    • Author(s)
      T. Yamada, T. Inaba, J. Tatebayashi, and Y. Fujiwara
    • Organizer
      36th Electronic Materials Symposium
    • Related Report
      2017 Annual Research Report
  • [Presentation] Growth and optical characteristics of Tm-doped AlGaN by organometallic vapor phase epitaxy2017

    • Author(s)
      R. Fuji, J. Takatsu, T. Inaba, J. Tatebayashi, and Y. Fujiwara
    • Organizer
      36th Electronic Materials Symposium
    • Related Report
      2017 Annual Research Report
  • [Presentation] Eu添加GaNを発光層にした狭帯域赤色垂直微小共振器LEDの実現2017

    • Author(s)
      塩見圭史、稲葉智宏、舘林潤、藤原康文
    • Organizer
      日本材料学会平成29年度第3回半導体エレクトロニクス部門委員会第2回研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Eu 添加GaN を発光層にした狭帯域赤色垂直微小共振器LED の実現2017

    • Author(s)
      舘林潤、稲葉智宏、塩見圭史、藤原康文
    • Organizer
      電子情報通信学会電子デバイス研究会/電子部品・材料研究会/レーザ/量子エレクトロニクス研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Modulated optical properties of Eu-doped GaN in a GaN based microcavity2016

    • Author(s)
      T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara
    • Organizer
      2016 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston, United States)
    • Year and Date
      2016-11-27
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Eu添加GaNにおけるEu発光中心の励起プロセス評価2016

    • Author(s)
      稲葉智宏, 児島貴徳, 山下元気, 芦田昌明, 藤原康文
    • Organizer
      第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学小金井キャンパス(東京都小金井市)
    • Year and Date
      2016-11-07
    • Related Report
      2016 Annual Research Report
  • [Presentation] Quantitative analysis on energy transfer process for Eu luminescent centers in Eu-doped GaN2016

    • Author(s)
      T. Inaba, T. Kojima, G. Yamashita, M. Ashida and Y. Fujiwara
    • Organizer
      International Workshop on Nitride Semiconductors 2016
    • Place of Presentation
      Hilton Orlando Lake Buena Vista (Orlando,United States)
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Eu添加GaNにおけるEu発光中心へのエネルギー輸送プロセスの定量的解析2016

    • Author(s)
      稲葉智宏, 児島貴徳, 山下元気, 芦田昌明, 藤原康文
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市中央区)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 多重量子ブロック層を用いたEu添加GaN赤色LEDの発光強度増大2016

    • Author(s)
      山田智也, 稲葉智宏, 児島貴徳, 小泉淳, 藤原康文
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市中央区)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Significant enhancement of emission intensity from Eu ions embedded in a GaN microcavity2016

    • Author(s)
      T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara
    • Organizer
      「ナノ光電子材料における消光問題の国際的枠組による解決」研究会
    • Place of Presentation
      京都大学吉田キャンパス(京都府京都市左京区)
    • Year and Date
      2016-08-19
    • Related Report
      2016 Annual Research Report
  • [Presentation] 微小共振器により変調されたEu添加GaNの発光特性評価2016

    • Author(s)
      稲葉智宏, 児島貴徳, 小泉淳, 藤原康文
    • Organizer
      日本材料学会平成28年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Place of Presentation
      大阪府立大学中百舌鳥キャンパス(大阪府堺市中区)
    • Year and Date
      2016-07-30
    • Related Report
      2016 Annual Research Report
  • [Presentation] Controlling emission properties of Eu-doped GaN by microcavity2016

    • Author(s)
      T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2016-07-06
    • Related Report
      2016 Annual Research Report
  • [Presentation] Enhanced red emission from Eu ions embedded in a GaN resonant optical microcavity2016

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, and A. Koizumi
    • Organizer
      Collaborative Conference on 3D and Materials Research 2016 (CC3DMR2016)
    • Place of Presentation
      Incheon (Seoul, Korea)
    • Year and Date
      2016-06-20
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 光状態密度の制御によるEu添加GaNの発光強度増大2016

    • Author(s)
      稲葉智宏, 児島貴徳, 小泉淳, 藤原康文
    • Organizer
      応用物理学会関西支部平成28年度第1回研究会
    • Place of Presentation
      産業技術総合研究所関西センター(大阪府池田市)
    • Year and Date
      2016-06-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2016

    • Author(s)
      Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
    • Organizer
      International Conference on Processing & Manufacturing of Advanced Materials; Processing, Fabrication, Properties, Applications (THERMEC’2016)
    • Place of Presentation
      Messe Congress Graz (Graz, Austria)
    • Year and Date
      2016-05-29
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 微小共振器によるEu添加GaNの発光モード制御2016

    • Author(s)
      稲葉智宏, 児島貴徳, 小泉淳, 藤原康文
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス(京都府京都市西京区)
    • Year and Date
      2016-05-09
    • Related Report
      2016 Annual Research Report
  • [Presentation] Significant Enhancement of Photoluminescence intensity Intensity from Eu-Doped GaN embedded Embedded in resonant Resonant cavitiy Cavity2016

    • Author(s)
      T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara
    • Organizer
      17th International Conference on Physics of Light-Matter Coupling in Nanostructures
    • Place of Presentation
      Todaiji Temple Cultural Center (Nara, Japan)
    • Year and Date
      2016-03-28
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 微小光共振器によるEu添加GaNの発光特性制御2016

    • Author(s)
      稲葉智宏, 児島貴徳, 小泉淳, 藤原康文
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都、目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
    • Organizer
      2nd International Workshop on Luminescent Materials 2015 (LumiMat’15)
    • Place of Presentation
      Kyoto University (Kyoto, Japan)
    • Year and Date
      2015-12-12
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Controlling the fraction of emission luminescent sites in Eu-doped GaN by compressive strain2015

    • Author(s)
      T. Inaba, A. Koizumi, and Y. Fujiwara
    • Organizer
      Nanophotonics in Asia
    • Place of Presentation
      Nakanoshima Center (Osaka, Japan)
    • Year and Date
      2015-12-10
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhancing Eu emission intensity by strain engineering in GaN heteroepitaxial layers2015

    • Author(s)
      T. Inaba, A. Koizumi, and Y. Fujiwar
    • Organizer
      3rd KANSAI Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      Osaka University ( Suita, Japan)
    • Year and Date
      2015-12-08
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes with Eu-doped GaN: effects of in-plane strain on Eu emission2015

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
    • Organizer
      5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015),
    • Place of Presentation
      Lakeshore Hotel ( Hsinchu, Taiwan)
    • Year and Date
      2015-09-06
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity2015

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
    • Organizer
      11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2015)
    • Place of Presentation
      BEXCO ( Busan, Korea)
    • Year and Date
      2015-08-24
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] In-Plane Compressive Strain Dependence of Photoluminescence Properties in Eu-Doped GaN2015

    • Author(s)
      T. Inaba, A. Koizumi, and Y. Fujiwar
    • Organizer
      28th International Conference on Defects in Semiconductor
    • Place of Presentation
      Aalto university (Helsinki, Finland)
    • Year and Date
      2015-07-26
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The mechanism of emission enhancement from Eu doped GaN by in-plane compressive strain2015

    • Author(s)
      T. Inaba, A. Koizumi, and Y. Fujiwara
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県、守山市)
    • Year and Date
      2015-07-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] 面内圧縮ひずみによるEu添加GaNの高発光効率化のメカニズム2015

    • Author(s)
      稲葉智宏, 小泉淳, 藤原康文
    • Organizer
      第七回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学片平キャンパス(宮城県、仙台市)
    • Year and Date
      2015-05-07
    • Related Report
      2015 Annual Research Report
  • [Patent(Industrial Property Rights)] AlInN膜および2次元フォトニック結晶共振器とこれらの製造方法ならびに半導体発光素子2017

    • Inventor(s)
      藤原康文, 稲葉智宏
    • Industrial Property Rights Holder
      藤原康文, 稲葉智宏
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017-02-28
    • Related Report
      2016 Annual Research Report

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Published: 2015-11-26   Modified: 2024-03-26  

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