• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

次世代超低消費電力トンネルFETの実現に向けたゲルマニウムスズの電子物性制御

Research Project

Project/Area Number 15J10995
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionThe University of Tokyo

Principal Investigator

柴山 茂久  東京大学, 工学系研究科, 特別研究員(PD)

Project Period (FY) 2015-04-24 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywordsジルコニウム酸化膜 / ハフニウム酸化膜 / 強誘電体 / 反強誘電体 / 相変態 / 相図 / 強誘電性 / ドーピング / ピエゾ応答力顕微鏡 / 相転移 / HfO2 / 信頼性
Outline of Annual Research Achievements

昨年度までに,HfO2の強誘電相は,Tetragonal(T)相とMonoclinic(M)相の共存状態において発現することを報告してきた.通常のドーパントでは数%ドーピングした場合にのみ強誘電相が安定化されるが,Zrドーピングの場合のみ,広いHf/Zr濃度で強誘電相が安定化される.最終年度では,このZrドーピングの特異性を理解することを目的とし,ZrO2サイドから強誘電相の発現過程について調べた.
薄膜ZrO2では,HfO2と異なり,T相が支配的に形成され,反強誘電性を示した.またZrO2のT相は熱的に安定であり,熱処理やドーピング等によってT→M変態は生じなかった.そもそもHfO2とZrO2では,バルクの相図より(1)互いに類似した相変態過程を有すること,(2)T→M変態温度はZrO2の方が低いため,ZrO2はHfO2よりT相を安定化しやすいはずであるという類似点と相違点がある.薄膜ZrO2におけるT相の安定性は(2)の特徴より熱力学的に理解可能である.またT相の安定性の違いに着目すると,ZrO2にとってHfO2は,熱力学的に,T相よりもM相を安定化させる側に位置しているため,これらの混晶系では広い濃度範囲でT相とM相の共存状態が実現されると理解できる.また,(1)の特徴に注目し,アンドープZrO2においてもT相とM相の共存状態が実現されれば強誘電相を発現するはずであると考えた.高温スパッタによって,ZrO2成長中にM相の核形成を行い,T相とM相の共存状態を実現した所,狙い通りアンドープZrO2でも強誘電相が発現することが分かった.
以上,HfO2およびZrO2といった二元系酸化膜,これらの固溶体であるHfxZr1-xO2における相変態過程は熱力学的な相図をベースに理解でき,これらの強誘電相はT相とM相の境界相として発現していると統一的に理解できることが分かった.

Research Progress Status

29年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

29年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • Research Products

    (55 results)

All 2018 2017 2016 2015

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Acknowledgement Compliant: 4 results) Presentation (50 results) (of which Int'l Joint Research: 21 results,  Invited: 3 results)

  • [Journal Article] Evolution of ferroelectric HfO2 in ultrathin region down to 3-nm2018

    • Author(s)
      Tian Xuan、Shibayama Shigehisa、Nishimura Tomonori、Yajima Takeaki、Migita Shinji、Toriumi Akira
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 10

    • DOI

      10.1063/1.5017094

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ferroelectricity of Non-doped Thin HfO2 Films in TiN/HfO2/TiN Stacks2016

    • Author(s)
      T. Nishimura, L. Xu, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 8S2 Pages: 08PB01-08PB01

    • DOI

      10.7567/jjap.55.08pb01

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Ferroelectric phase stabilization of HfO2 by nitrogen doping2016

    • Author(s)
      L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 9 Pages: 091501-091501

    • DOI

      10.7567/apex.9.091501

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures2016

    • Author(s)
      T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
    • Journal Title

      Appl. Phys. Lett.

      Volume: 108 Issue: 6 Pages: 061909-061909

    • DOI

      10.1063/1.4941991

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer2015

    • Author(s)
      A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
    • Journal Title

      Appl. Phys. Lett.

      Volume: 107 Issue: 21

    • DOI

      10.1063/1.4936275

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] Nucleation-Driven Ferroelectric Phase Formation in ZrO2 Thin Films -What is Different in ZrO2 from HfO2 ?-2018

    • Author(s)
      S. Shibayama, T. Nishimura, S. Migita, and A. Toriumi
    • Organizer
      2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ge酸化に伴う表面平坦性の劣化と酸化機構の変化2018

    • Author(s)
      竹村 千里、柴山 茂久、西村 知紀、矢嶋 赳彬、鳥海 明
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] パルスレーザーアニールによるHfO2薄膜の非平衡結晶化2018

    • Author(s)
      森 優樹、柴山 茂久、矢嶋 赳彬、西村 知紀、右田 真司、鳥海 明
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] アンドープZrO2薄膜における強誘電性の実現2018

    • Author(s)
      柴山 茂久、西村 知紀、右田 真司、鳥海 明
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] HfxZr1-xO2が広い濃度領域で強誘電性を示す起源について2018

    • Author(s)
      柴山 茂久、西村 知紀、右田 真司、鳥海 明
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Improvement of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO22018

    • Author(s)
      X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Dopant-independent maximum Pr of doped ferroelectric HfO22017

    • Author(s)
      L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜 (横浜)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] HfO2膜の強誘電相形成における熱履歴の重要性2017

    • Author(s)
      柴山 茂久、徐 倫、田 旋、右田 真司、鳥海 明
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜 (横浜)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ferroelectric tunnel junctions with ultrathin Y2O3-doped HfO22017

    • Author(s)
      X. Tian, S. Shibayama, L. Xu, S. Migita, and A. Toriumi
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜 (横浜)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] General relationship for cation and anion doping effects on ferroelectric HfO2 formation2017

    • Author(s)
      L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      応用物理シリコンテクノロジー分科会 第197回 研究集会
    • Place of Presentation
      機会振興会館 (東京)
    • Year and Date
      2017-01-30
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] 圧電応答力顕微鏡を用いたYドープHfO2の強誘電性ドメインの観察2017

    • Author(s)
      柴山 茂久、徐 倫、田 旋、右田 真司、鳥海 明
    • Organizer
      特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第22回)
    • Place of Presentation
      東レ研修センター(三島)
    • Year and Date
      2017-01-19
    • Related Report
      2016 Annual Research Report
  • [Presentation] Thickness-dependent ferroelectric phase evolution in doped HfO22017

    • Author(s)
      L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Direct Evidence of 3-nm-thick Ferroelectric HfO22017

    • Author(s)
      X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties2017

    • Author(s)
      X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2017 IEEE International Electron Devices Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties2017

    • Author(s)
      X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      応用物理シリコンテクノロジー分科会 第198回 研究集会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Ferroelectric HfO2 MIS Capacitor and MISFET on Oxide Semiconductors2016

    • Author(s)
      L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      47th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      San Diego (USA)
    • Year and Date
      2016-12-08
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] General relationship for cation and anion doping effects on ferroelectric HfO2 formation2016

    • Author(s)
      L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2016 IEEE International Electron Devices Meeting
    • Place of Presentation
      San Francisco (USA)
    • Year and Date
      2016-12-03
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Opportunity of Ferroelectric Phase Formation in Nitrogen-doped HfO22016

    • Author(s)
      L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba (Japan)
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Tunneling Electro-resistance Effect in Ultra-thin Ferroelectric HfO2 Junctions2016

    • Author(s)
      X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba (Japan)
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Depolarization Process in Ferroelectric HfO2 Probed by Piezo-response Force Microscopy (PFM)2016

    • Author(s)
      S. Shibayama, L. Xu, X. Tian, S. Migita, and A. Toriumi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba (Japan)
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effects of nitrogen bonding on para-/ferroelectric transition of HfO22016

    • Author(s)
      L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 強誘電性HfO2膜における局所内部電界に起因する分極の不均質性2016

    • Author(s)
      柴山 茂久、徐 倫、田 旋、右田 真司、鳥海 明
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Study of polarization uniformity in N-doped ferroelectric HfO2 by piezo-response force microscopy2016

    • Author(s)
      L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 圧電応答力顕微鏡を用いた強誘電性HfO2のエージング特性に関する研究2016

    • Author(s)
      柴山茂久, 徐倫, 右田真司, 鳥海明
    • Organizer
      応用物理シリコンテクノロジー分科会 第194回 研究集会「2016 VLSI特別シンポジウム」特集
    • Place of Presentation
      甲南大学(東京)
    • Year and Date
      2016-08-23
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Study of Wake‐up and Fatigue Properties in Doped and Undoped Ferroelectric HfO2 in Conjunction with Piezo‐Response Force Microscopy Analysis2016

    • Author(s)
      S. Shibayama, L. Xu, S. Migita, and A. Toriumi
    • Organizer
      2016 Symposia on VLSI Technology and Circuits
    • Place of Presentation
      Hawaii (USA)
    • Year and Date
      2016-06-13
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 10-nm-Scale Ferroelectric Domain Distribution in Ferroelectric HfO2 Observed by Using Piezo-Response Force Microscopy2016

    • Author(s)
      S. Shibayama, L. Xu, X. Tian, S. Migita, and A. Toriumi
    • Organizer
      7th International Symposium on control of semiconductor interfaces (ISCSI-VII)/International SiGe Technology and Device Meeting (ISTDM 2016)
    • Place of Presentation
      Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya (Japan)
    • Year and Date
      2016-06-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 多相HfO2膜における均一強誘電相の発現2016

    • Author(s)
      柴山茂久, 徐倫, 右田真司, 鳥海明
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] 強誘電性HfO2膜における分極ドメインの減衰2016

    • Author(s)
      柴山茂久, 徐倫, 右田真司, 鳥海明
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] New finding of ferroelectricity of N doped HfO2 films2016

    • Author(s)
      L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] ラマン分光測定及びXRDによる強誘電性YドープHfO2の構造解析2016

    • Author(s)
      厳樫一孝, 柴山茂久, 矢嶋赳彬, 西村知紀, 右田真司, 鳥海明
    • Organizer
      2016年 第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] 原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性2016

    • Author(s)
      兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
    • Organizer
      特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第21回)
    • Place of Presentation
      東レ総合研修センター(静岡県三島市)
    • Year and Date
      2016-01-21
    • Related Report
      2015 Annual Research Report
  • [Presentation] Si1-xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析2016

    • Author(s)
      長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
    • Organizer
      特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第21回)
    • Place of Presentation
      東レ総合研修センター(静岡県三島市)
    • Year and Date
      2016-01-21
    • Related Report
      2015 Annual Research Report
  • [Presentation] Study of local polarization in ferroelectric HfO2 films with piezo-response force microscope (PFM)2016

    • Author(s)
      S. Shibayama, L. Xu, S. Migita, and A. Toriumi
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectonics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultra-large Scale Integration"
    • Place of Presentation
      Tohoku university (Sendai, Miyagi, Japan)
    • Year and Date
      2016-01-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Control of Schottky barrier height at metal/Ge interface by insertion of GexSn1-x layer2016

    • Author(s)
      A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectonics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultra-large Scale Integration"
    • Place of Presentation
      Tohoku university (Sendai, Miyagi, Japan)
    • Year and Date
      2016-01-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer2015

    • Author(s)
      A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
    • Organizer
      International Symposium on EcoTopia Science 2015 (ISETS '15)
    • Place of Presentation
      Nagoya university (Chikusa-ku, Nagoya, Japan)
    • Year and Date
      2015-11-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration2015

    • Author(s)
      Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, and S. Zaima
    • Organizer
      International Symposium on EcoTopia Science 2015 (ISETS '15)
    • Place of Presentation
      Nagoya university (Chikusa-ku, Nagoya, Japan)
    • Year and Date
      2015-11-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 超高Sn組成Sn1-xGexエピタキシャル層の形成および金属/Sn1-xGex/Geコンタクトの電気伝導特性の制御2015

    • Author(s)
      鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明
    • Organizer
      応用物理学会SC東海地区学術講演会 2015 (JSAP SCTS 2015)
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2015-11-14
    • Related Report
      2015 Annual Research Report
  • [Presentation] 密度汎関数法によるSi1-xSnx価電子帯端準位の理論予測および実験的妥当性2015

    • Author(s)
      長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
    • Organizer
      応用物理学会SC東海地区学術講演会 2015 (JSAP SCTS 2015)
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2015-11-14
    • Related Report
      2015 Annual Research Report
  • [Presentation] Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge gate stack2015

    • Author(s)
      M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
    • Organizer
      2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEIVICES -SCIENCE AND TECHNOLOGY-(IWDTF2015)
    • Place of Presentation
      National Museum of Emerging Science and Innovation (Koto-ku, Tokyo, Japan)
    • Year and Date
      2015-11-02
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of energy band structure of Si1-xSnx by density functional theory calculation and photoelectron spectroscopy2015

    • Author(s)
      Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
    • Organizer
      2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEIVICES -SCIENCE AND TECHNOLOGY-(IWDTF2015)
    • Place of Presentation
      National Museum of Emerging Science and Innovation (Koto-ku, Tokyo, Japan)
    • Year and Date
      2015-11-02
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ge基板上への超高Sn組成Ge1-xSnxエピタキシャル層の形成およびGe1-xSnx界面層が金属/Geコンタクトのショットキー障壁高さに及ぼす影響2015

    • Author(s)
      鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明
    • Organizer
      第4回結晶工学未来塾
    • Place of Presentation
      東京農工大学(東京都小金井市)
    • Year and Date
      2015-10-29
    • Related Report
      2015 Annual Research Report
  • [Presentation] Impact of ultra-high Sn content SnxGe1-x interlayer on reducing Schottky barrier height at metal/n-Ge interface2015

    • Author(s)
      A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center (Sapporo, Hokkaido, Japan)
    • Year and Date
      2015-09-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 1T-TaS2の相転移に対する温度およびゲートバイアス変調効果2015

    • Author(s)
      柴山茂久, 方楠, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
    • Organizer
      第76回 応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Ge1-xSnxエピタキシャル層中における欠陥形成に対するSn組成の影響2015

    • Author(s)
      浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
    • Organizer
      第76回 応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] 原子層堆積法を用いたGeO2/Ge界面の低温形成と電気的特性評価2015

    • Author(s)
      兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
    • Organizer
      第76回 応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Reduction of Schottky barrier height with Sn/Ge contact2015

    • Author(s)
      A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
    • Organizer
      JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration
    • Place of Presentation
      Marseille(France)
    • Year and Date
      2015-07-09
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御2015

    • Author(s)
      鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2015-06-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015

    • Author(s)
      浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2015-06-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Formation of Type-I Energy Band Alignment of Ge1-x-ySixSny/Ge Heterostructure2015

    • Author(s)
      T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima
    • Organizer
      The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI9)
    • Place of Presentation
      Montreal(Canada)
    • Year and Date
      2015-05-17
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers2015

    • Author(s)
      T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
    • Organizer
      The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI9)
    • Place of Presentation
      Montreal(Canada)
    • Year and Date
      2015-05-17
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research

URL: 

Published: 2015-11-26   Modified: 2024-03-26  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi