| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
The purpose of this research is to clarify the propagation and/or diffusion process of photoexcited carriers generated in a semiconductor quantum well. We carried out both experimental and theoretical study. Experimentally, we developed a time-resolved multi-probe scanning near-field optical microscope that enables high resolution measurement in both spatial and time, and observed diffusion of photoexcited carriers in InGaN quantum well in detail. In theory, we constructed a phenomenological analytical model incorporating local excitation and luminescence processes into diffusion equations and identified important parameters in carrier diffusion from comparison with experimental results.
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