| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Outline of Final Research Achievements |
Silicon oxides, which are widely used as gate insulators of metal oxide semiconductor field-effect transistors in integrated circuits, have been investigated from the viewpoint of thermal stability, surface reaction, and new nano-structure formation by heating in vacuum. The obtained results are as follows. (1) During heating in vacuum, voids in the oxide layer are frequently formed at sites of adhesion of silicon particles. (2) By exposing organic compounds gas to the surface during cooling, nano-ring structures are obviously formed inside the voids. (3) The shape of the voids are controlled by surface orientation of the silicon substrate.
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