| Project/Area Number |
15K04628
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials engineering
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| Research Institution | Waseda University |
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Principal Investigator |
Tatsumi Kohei 早稲田大学, 理工学術院(情報生産システム研究科・センター), 教授 (80373710)
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| Co-Investigator(Kenkyū-buntansha) |
犬島 浩 早稲田大学, 理工学術院(情報生産システム研究科・センター), 教授 (60367167)
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| Project Period (FY) |
2015-10-21 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | ナノニッケル粒子 / 導電接続 / パワーデバイス / シリコンカーバイド / 熱応力緩和 / Niナノ粒子 / 応力緩和 / SiCチップ / Al電極膜 / ナノＮｉ粒子 / 接合 / インターコネクション / ダイボンディング / 高温耐熱 / ナノNi粒子 |
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| Outline of Final Research Achievements |
In order to take full advantage of the characteristics of SiC semiconductor, especially as high temperature heat resistant devices, the development of new packaging technology is required. Since the solder materials which have been used conventionally have a low melting point, Au-Ge alloys, nano Ag particles, etc. have been studied as alternative materials, but the relaxation of thermal stress caused by CTE mismatch between the chip and substrate was considered to be a major subject. In this research, focusing on nano Ni which is highly resistant also against high temperature corrosion, we have worked on Ni nano-particle production and optimization of bonding conditions. Compared to Ag particles, their sintering temperature is relatively high. However the bonds are once formed and then their bonding strength is sufficiently high. The bonding of nano-Ni particles to Al foils inserted for stress relaxation is also possible at low temperature, and showed high bond reliability.
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