| Project/Area Number |
15K04653
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
Okamura Soichiro 東京理科大学, 理学部第一部応用物理学科, 教授 (60224060)
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| Co-Investigator(Kenkyū-buntansha) |
中嶋 宇史 東京理科大学, 理学部, 助教 (60516483)
橋爪 洋一郎 東京理科大学, 理学部第一部応用物理学科, 助教 (50711610)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 分極誘起抵抗変化 / 高分子強誘電体 / 極薄膜 / トーマスフェルミ遮蔽長 / トンネル伝導 / FTJ / 強誘電体 / 抵抗変化 / 分極遮蔽電荷 / 記憶素子 / 分極反転 / 異種電極 / 自発分極 |
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| Outline of Final Research Achievements |
We studied polarization-induced resistance switching in ferroelectric tunneling junction (FTJ) structure. The original point of this study is the use of ferroelectric VDF/TrFE copolymer. As a result, we revealed that the direction of spontaneous polarization induced high/low resistances and resistance ratios depended on the work functions of two electrode materials. When Au and Pt were used as electrode materials, the resistance ratio of 10,000% was achieved. This value was larger than those previously reported in the FTJ structures with ceramic ferroelectrics. We also investigated the properties of FTJ structures with Nb, Ru and high-doped silicon electrodes instead of Pt. Finally, we concluded that asymmetry potential barrier induced at electrode/ferroelectrics interface due to the differences in Thomas-Fermi screening length in electrode materials was the origin of the polarization-induced resistance switching.
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