| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
Alminium nitride (AlN) is a promising material for optoelectronic device applications such as UV light-emitting diodes and UV laser diodes. The method to prevent a large mismatch with AlN/ sapphire and to avoid the high equilibrium pressure and temperature environment is required to grow high crystalline AlN. To investigate the chemical change from AlN on the surface of Al2O3 substrate, XRD peaks was monitored. Samples were included N-Al bonding for the formation of AlN. The peaks assigned to N-O and Al-O bondings were not observed. Therefore, it was indicated that AlN was formed by Al2O3 substrate nitridation.We have carried out preliminary experiments to explore sub- atmospheric pressure solution growth to grow thick single AlN crystal films for the use as substrate. Semi-transparent AlN layer was grown on the (0 0 01) sapphire substrate by using plasma mixture of nitrogen. The luminescence property without a deep level yellow emission suggested the growth of high-crystalline AlN.
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