High quality bulk-SiGe single-crystal growth methods for high-speed CPU

• Project/Area Number: 15K04671
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Japan Aerospace EXploration Agency
• Principal Investigator: Arai Yasutomo 国立研究開発法人宇宙航空研究開発機構, 有人宇宙技術部門, 主任研究開発員 (90371145)
• Co-Investigator(Kenkyū-buntansha): 前田 辰郎 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹 (40357984)
• Project Period (FY): 2015-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: SiGe / 結晶成長 / 電子材料 / シリコンゲルマニウム / 飽和溶融帯移動法 / 赤外透過率

Outline of Final Research Achievements

We studied high quality bulk SiGe crystals applying for the high-speed transistor using travelling liquidus zone methods. Hole mobilities of SiGe crystals are higher than that of the Si crystals. A grown SiGe crystal on Si-see d usually occurred mosaic structures due to the difference in thermal expansion between the Si and SiGe. The SiGe-seed crystals did not produce single SiGe crystals because might be caused by constitutional supercooling. We try a new double zone method: a seed crystal is sandwiched by liquidus zone. The zone under the seed will be melt the seed with SiGe growing.

Academic Significance and Societal Importance of the Research Achievements

高速CPU開発は、今後の高速移動体通信や処理速度の速い小型PCには必須の機器であり開発が渇望されている。SiGe結晶の高品質結晶は、高速CPUを実現する次世代の結晶候補であり、インテルなどのトランジスタにも部分的に利用されているが、高品質結晶が得られれば更なる高速化が期待される。現在、高品質SiGeの量産に成功している企業はなく、本研究の成果が結実すれば、電子デバイス産業の一翼を担うことができる。

Research Products

• [Journal Article] Study of SiGe Crystal Growth Interface Processed in Microgravity (2018)
  • Author(s): Arai Yasutomo、Kinoshita Kyoichi、Tsukada Takao、Kubo Masaki、Abe Keita、Sumioka Sara、Baba Satoshi、Inatomi Yuko
  • Journal Title: Crystal Growth & Design Volume: 18 Issue: 6 Pages: 3697-3703
  • DOI: 10.1021/acs.cgd.8b00544
  • Peer Reviewed
• [Journal Article] Si1-XGeX bulk single crystals for substrates of electronic devices (2017)
  • Author(s): Kyoichi Kinoshita,Yasutomo Arai, Tatsuro Maeda, Osamu Nakatsuka
  • Journal Title: Materials Science in Semiconductor Processing Volume: 70 Pages: 12-16
  • DOI: 10.1016/j.mssp.2016.10.012
  • Peer Reviewed
• [Journal Article] Hole Hall mobility of SiGe alloys grown by the traveling liquidus-zone method (2015)
  • Author(s): Tatsuro Maeda, Hiroyuki Hattori, Wen Hsin Chang, Yasutomo Arai and Kyoichi Kinoshita
  • Journal Title: Applied physics letters Volume: 107 Issue: 15 Pages: 152104-152104
  • DOI: 10.1063/1.4933330
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] TLZ法によるSiGe結晶育成中のメルト内対流効果 (2016)
  • Author(s): 木下 恭一、荒井 康智、稲冨裕光、塚田隆夫
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 新潟市朱鷺メッセ
  • Year and Date: 2016-09-13
• [Presentation] TLZ法によるSiGe結晶育成 (2016)
  • Author(s): 木下 恭一、荒井 康智、稲冨裕光、塚田隆夫
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 新潟市朱鷺メッセ
  • Year and Date: 2016-09-13
• [Presentation] Homogeneous bulk SiGe crystals grown on board the International Space Station (2016)
  • Author(s): Y. Arai, K. Kinoshita, T. Tsukada, K. Abe, S. Sumioka,, M. Kubo, S. Baba, T. Maeda, Y. Inatomi
  • Organizer: ICCGE-18
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2016-08-07
  • Int'l Joint Research
• [Presentation] TLZ法を利用した均一組成バルクSiGe結晶（2）移動度評価 (2016)
  • Author(s): 前田辰郎, 服部浩之、Wen Hsin Chang, 木下恭一、荒井康智
  • Organizer: 応用物理学会年会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] TLZ法を利用した均一組成バルクSiGe結晶（1）大口径化と高品質化 (2016)
  • Author(s): 木下 恭一、荒井 康智
  • Organizer: 応用物理学会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] 微小重力下でTLZ法により育成したSiGe結晶分析 (2015)
  • Author(s): 荒井康智、木下恭一、阿部敬太、 住岡沙羅、久保正樹、塚田隆夫、馬場嵯登史、稲富裕光
  • Organizer: 結晶成長学会
  • Place of Presentation: 北海道大学
  • Year and Date: 2015-10-19
• [Presentation] Hall hole mobility of single crystalline random SiGe alloys (2015)
  • Author(s): Tatsuro Maeda, Hiroyuki Hattori, Wen Hsin Chang, Yasutomo Arai and Kyoichi Kinoshita
  • Organizer: 9th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Montreal, Quebec, Canada
  • Year and Date: 2015-05-17
  • Int'l Joint Research