Control of insulator/InAlN interface using high-temperature annealed Al2O3 ultrathin layer and its application
| Project/Area Number |
15K04672
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Hokkaido University |
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Principal Investigator |
Akazawa Masamichi 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 窒化インジウムアルミニウム / MOS / MIS / 二酸化シリコン / InAlN / SiO2 / 界面制御 / アルミナ / MOS構造 |
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| Outline of Final Research Achievements |
GaN-based HEMTs can contribute to the 5G wireless communication system. InAlN which can be used as a barrier material on GaN is attracting much attention to improve the operational power and frequency limit. However, since the leakage current through InAlN is high due to its material properties, a combination with an insulator to form a MOS gate structure is necessary. In this project, a research work was made to control an SiO2/InAlN interface. An insertion of ultrathin Al2O3 or plasma oxide interlayer was found to be efficient, leading to a successful formation of an excellent SiO2/InAlN interface.
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Report
(4 results)
Research Products
(13 results)
