• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Control of insulator/InAlN interface using high-temperature annealed Al2O3 ultrathin layer and its application

Research Project

Project/Area Number 15K04672
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionHokkaido University

Principal Investigator

Akazawa Masamichi  北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)

Project Period (FY) 2015-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywords窒化インジウムアルミニウム / MOS / MIS / 二酸化シリコン / InAlN / SiO2 / 界面制御 / アルミナ / MOS構造
Outline of Final Research Achievements

GaN-based HEMTs can contribute to the 5G wireless communication system. InAlN which can be used as a barrier material on GaN is attracting much attention to improve the operational power and frequency limit. However, since the leakage current through InAlN is high due to its material properties, a combination with an insulator to form a MOS gate structure is necessary. In this project, a research work was made to control an SiO2/InAlN interface. An insertion of ultrathin Al2O3 or plasma oxide interlayer was found to be efficient, leading to a successful formation of an excellent SiO2/InAlN interface.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • 2015 Research-status Report
  • Research Products

    (13 results)

All 2018 2017 2016 2015

All Journal Article (2 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 2 results) Presentation (11 results) (of which Int'l Joint Research: 4 results,  Invited: 2 results)

  • [Journal Article] Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers2017

    • Author(s)
      M. Akazawa and A. Seino
    • Journal Title

      Physica Status Solidi B

      Volume: 254 Issue: 8

    • DOI

      10.1002/pssb.201600691

    • NAID

      120006491497

    • Related Report
      2017 Annual Research Report 2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016

    • Author(s)
      M. Matys, B. Adamowicz, A. Domanowska, A. Michalewicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
    • Journal Title

      J. Appl. Phys.

      Volume: 120 Issue: 22

    • DOI

      10.1063/1.4971409

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] プラズマ酸化膜介在層を有するSiO2/InAlN界面の特性2018

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Al2O3およびプラズマ酸化物超薄膜介在層を有するSiO2/InAlN界面の特性2018

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第53回応用物理学会北海道支部/第14回日本光学会北海道支部合同学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Al2O3超薄膜層を挿入したSiO2/InAlN界面の特性―Al2O3膜厚依存性―2017

    • Author(s)
      清野 惇、赤澤 正道
    • Organizer
      2017年<第64回>応用物理学会春季学術講演会
    • Place of Presentation
      横浜市,パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] Al2O3超薄膜介在層を有するSiO2/InAlN界面の特性2017

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Reduction of Interface State Density at SiO2/InAlN Interface by Inserting Ultrathin Interlayers2016

    • Author(s)
      M. Akazawa, A. Seino, N. Yokota and T. Hasezaki
    • Organizer
      International Workshop on Nitride Semiconductors 2016
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] プラズマ酸化層を挿入したSiO2/InAlN界面の特性2016

    • Author(s)
      清野 惇、横田 直茂、赤澤 正道
    • Organizer
      2016年<第77回>応用物理学会秋季学術講演会
    • Place of Presentation
      新潟市,朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] プラズマCVD SiO2/InAlN界面へのAl2O3超薄膜層挿入の効果2016

    • Author(s)
      清野 惇,長谷崎泰斗,横田直茂,赤澤 正道
    • Organizer
      2016年<第63回>応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Research-status Report
  • [Presentation] Characterization of Surfaces and Interfaces of InAlN (invited)2016

    • Author(s)
      M. Akazawa
    • Organizer
      2016 RCIQE International Seminar
    • Place of Presentation
      Sapporo (Japan)
    • Year and Date
      2016-03-08
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Nature and origin of interface states at dielectric/III-N heterojunction interfaces2015

    • Author(s)
      M. Matys, B. Adamowicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
    • Organizer
      2015 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2015-11-29
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] プラズマCVDにより形成されたSiO2/InAlN界面の評価2015

    • Author(s)
      清野 惇,赤澤 正道
    • Organizer
      2015年<第76回>応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(名古屋)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Research-status Report
  • [Presentation] Characterization of Surfaces and Interfaces of InAlN/GaN Heterostructures (invited)2015

    • Author(s)
      M. Akazawa and T. Hashizume
    • Organizer
      11th International Conference on Nitride Semiconductors (ICNS11)
    • Place of Presentation
      Beijing (China)
    • Year and Date
      2015-08-30
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited

URL: 

Published: 2015-04-16   Modified: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi