| Project/Area Number |
15K04681
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo City University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
Yamazaki Satoshi 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センターダイヤモンドデバイスチーム, 招聘研究員 (80358241)
Takeuchi Daisuke 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センターダイヤモンド材料チーム, チーム長 (10357402)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | ダイヤモンド / 光電子分光法 / C1s光電子スペクトル / エッチングによる表面ダメージ / soft-ICP / 価電子帯 |
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| Outline of Final Research Achievements |
Effects on the surface by etching process essential for diamond device fabrication (soft-ICP (ICP: Inductively Coupled Plasma) etching method which can be expected to reduce damage on the surface of diamond) and the change of valence band near the surface by boron and phosphorus doped at high concentration were investigated using a photoelectron spectrometer (AXIS Nova or ESCA - 300), and in some samples, using hard X - ray photoelectron spectroscopy (high intensity synchrotron radiation facility SPring - 8, BL47 XU). As a result, it was found that the soft-ICP etching method does not change the chemical bond state of the sample surface. The experimental results also suggested that the band near the diamond surface would bend due to high concentration doping.
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