| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
Carrier doping in ScN films with high electron mobility was investigated.
ScN films and Mg-doped ScN films were grown on MgO and sapphire substrates by a MBE method, and their crystallinity and electric properties were examined. Single crystalline films with high crystallinity were successfully obtained on sapphire substrates. All the obtained films were degenerate n-type semiconductor, which was likely owing to nonstoichiometry.
The MBE grown ScN films were annealed with nitrogen radical irradiation. Their carrier concentration decreased with increasing the electron mobility. Nitrogen radical irradiation is probably a promising way to obtain carrier-controlled ScN films.
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