Generation and annihilation mechanisms of plasma-induced defects on semiconductor surface
| Project/Area Number |
15K04717
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Plasma electronics
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Nunomura Shota 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (50415725)
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| Co-Investigator(Renkei-kenkyūsha) |
MATSYBARA Koji 産業技術総合研究所, 太陽光発電研究センター, 研究センター長 (90202324)
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| Research Collaborator |
SAKATA Isao 産業技術総合研究所, 太陽光発電研究センター
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | プラズマ / 半導体 / 水素化アモルファスシリコン / 太陽電池 / 欠陥 / キャリア輸送 / ポンプ－プローブ法 / トラップ / プラズマ誘起欠陥 / プラズマプロセス / 光電流 / キャリア / ラジカル / プラズマエレクトロニクス / シリコン / アモルファスシリコン |
|---|
| Outline of Final Research Achievements |
An in-situ characterization technique for plasma-induced defects has been successfully developed, based on optical pump-probe method. Using this technique, we find that the density of plasma-induced defects is of the order of 1e18 cm-3 for hydrogenated amorphous silicon (a-Si:H) under plasma CVD process. The plasma-induced defects can be annihilated by post-annealing under the conditions of appropriate temperature and period. We have fabricated silicon heterojunction solar cells with a-Si:H passivation layers. The conversion efficiency of 21 % is achieved by controlling the a-Si:H growth conditions and post-annealing treatment, based on the knowledge obtained in this study.
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Report
(4 results)
Research Products
(35 results)
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[Patent(Industrial Property Rights)] 酸化物半導体材料の開発とｐｎ接合の作製と光電変換素子への応用2015
Inventor(s)
高島, 菊地, 外岡, 川中, 吉田, 相浦, 布村
Industrial Property Rights Holder
高島, 菊地, 外岡, 川中, 吉田, 相浦, 布村
Industrial Property Rights Type
特許
Industrial Property Number
2015-117010
Filing Date
2015-06-09
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