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Development of X-ray detector for continuous measurement using double SOI

Research Project

Project/Area Number 15K04727
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field General applied physics
Research InstitutionHigh Energy Accelerator Research Organization

Principal Investigator

Miyoshi Toshinobu  大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 研究機関講師 (20470015)

Research Collaborator ARAI Yasuo  高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (90167990)
Project Period (FY) 2015-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords半導体 / SOI / X線 / 電子デバイス / CMOS / 半導体検出器 / イメージセンサ / X線検出器
Outline of Final Research Achievements

We have developed pixel detectors including both sensor and circuit, using SOI (Silicon-on-insulator) technology which improves performance of CMOS circuit. The pixel circuit includes a preamplifier. To solve problems such as crosstalk between sensor and circuit, double SOI wafer has utilized. Top SOI layer was used as SOI-CMOS circuit and the bottom as a shield layer. The crosstalk at the preamplifier in the pixel circuit was suppressed by the middle SOI layer. The sensor has two storage capacitors in a pixel, and these can be alternately used. It helps to reduce readout dead time, and therefore the sensor can be used in various application research which requires continuous measurement.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • 2015 Research-status Report
  • Research Products

    (6 results)

All 2018 2017 2016

All Journal Article (3 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 3 results,  Open Access: 2 results,  Acknowledgement Compliant: 1 results) Presentation (3 results)

  • [Journal Article] Performance study of double SOI image sensors2018

    • Author(s)
      Miyoshi T.、Arai Y.、Fujita Y.、Hamasaki R.、Hara K.、Ikegami Y.、Kurachi I.、Nishimura R.、Ono S.、Tauchi K.、Tsuboyama T.、Yamada M.
    • Journal Title

      Journal of Instrumentation

      Volume: 13 Issue: 02 Pages: C02005-C02005

    • DOI

      10.1088/1748-0221/13/02/c02005

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Front-end electronics of double SOI imaging sensors2017

    • Author(s)
      Toshinobu Miyoshi et al.
    • Journal Title

      Journal of Instrumentation

      Volume: 12 Issue: 02 Pages: 1-8

    • DOI

      10.1088/1748-0221/12/02/c02004

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Advanced monolithic pixel sensors using SOI technology2016

    • Author(s)
      T. Miyoshi et al.
    • Journal Title

      Nuclear Instruments and Methods A

      Volume: 824 Pages: 439-442

    • DOI

      10.1016/j.nima.2015.11.109

    • Related Report
      2015 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] 積分型SOI放射線ピクセルセンサーの開発2018

    • Author(s)
      三好敏喜、新井康夫、小野峻、倉知郁生、田内一弥、西村龍太郎、浜崎竜太郎、藤田陽一、山田美帆
    • Organizer
      日本物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] SOI技術を用いた放射線ピクセルセンサー開発の最近の進展II2018

    • Author(s)
      三好敏喜、新井康夫、西村龍太郎
    • Organizer
      応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 2層SOIウエハを用いた放射線イメージセンサー2016

    • Author(s)
      三好敏喜、他
    • Organizer
      日本物理学会
    • Place of Presentation
      東北学院大学(宮城県仙台市)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Research-status Report

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Published: 2015-04-16   Modified: 2019-03-29  

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