| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
To measure a temperature distribution above 1500 oC in the plane of the SiC wafers, temperature indicator based on Pt-C eutectic system was investigated. Graphite plates with deposition of platinum on the surface or with platinum foil placed on it were annealed in a furnace at several pre-set temperatures, and surface condition and cross section of the samples were observed by SEM. From the detailed observations of the surface morphology and distribution of platinum alloy inside the graphite plate, annealing temperatures other than eutectic temperature were determined qualitatively for the first time. Combination of platinum foil and graphite plate enables temperature indicator to discriminate the difference in annealing temperature of ± 5 K with respect to the eutectic temperature. Evaluation of the change in reflectance of the sample surface showed possibility to quantify the annealing temperatures.
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