Low-dimensional D-A nanocrystals and their phototransistor
| Project/Area Number |
15K05615
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Organic and hybrid materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Wakahara Takatsugu 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (40303177)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Keywords | フラーレン / 共結晶 / トランジスタ / ポルフィリン / 電界効果トランジスタ / ドナー / アクセプター |
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| Outline of Final Research Achievements |
Three novel supramolecular D-A nanocrystals, comprising fullerene and porphyrin were prepared by a simple liquid-liquid interfacial precipitation method and fully characterized by means of optical microscopy, AFM, STEM, TEM, and XRD. It is established that the highly crystalline fullerene/ porphyrin nanocrystals show n-type charge transport characteristics when incorporated in bottom-gate, bottom-contact field-effect transistors (FETs).
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Report
(4 results)
Research Products
(8 results)
