| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Outline of Final Research Achievements |
Effect of small amounts of Al or Fe-doping on conducting properties for La-excess-type lanthanum silicate was investigated. In case of high-temperature (1973 K) sintering for preparation, a grain interior resistance could be minimized. It is probably due to increase in oxygen interstitial concentration as charge carriers. In addition, there is a difference in a grain boundary resistances for Al and Fe-doping specimens, and it is revealed that Fe-doping system with optimum doping level had smaller grain boundary resistance compared with Al-doping one with the same doping level. By using X-ray diffraction measurements with synchrotron radiation microbeam at BL24XU, SPring-8, it was found that large grain boundary resistance in case of Al-doping was due to chemically unstable phase formation. On the other hand, in the case of Fe-doping, disappearance of the phase resulted in stabilization in grain boundary structure with reducing grain boundary resistance.
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