Electrochemical formation Si film in LiF-KF
| Project/Area Number |
15K05652
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic industrial materials
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| Research Institution | Doshisha University |
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Principal Investigator |
Goto Takuya 同志社大学, 理工学部, 教授 (60296754)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 核形成 / 核成長 / 溶融塩電解 / シリカ還元 / シリカ溶解 / シリコン薄膜電析 / シリコン / 核発生 / 電解 / 核生成 / 結晶核制御 |
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| Outline of Final Research Achievements |
Electrochemical formation of silicon film has been studied in LiF-KF. The silicon nucleation process has been observed after conducting potentiostatic electrolysis at 0.7 V for 0.0002 seconds. The numbers of nucleation sites have increased with increasing the electrolysis durations. We confirmed that dendrites formation of silicon by prolonging the electrolysis times.
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Report
(4 results)
Research Products
(10 results)
