Formation process of metal precipitation layer in glass substrate by solid-state ion-exchange method, and application to fine electrical wiring

• Project/Area Number: 15K05712
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Chiba University
• Principal Investigator: Matsusaka Souta 千葉大学, 大学院工学研究院, 准教授 (30334171)
• Co-Investigator(Kenkyū-buntansha): 森田 昇 千葉大学, 大学院工学研究院, 教授 (30239660) ; 比田井 洋史 千葉大学, 大学院工学研究院, 教授 (60313334)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 固体イオン交換 / ガラス / 銀 / 内部配線 / イオン交換 / 電圧印加 / 金属析出

Outline of Final Research Achievements

We tried to understand the precipitation mechanisms of silver crystal formed by solid-state ion exchange method assisted with forward/reverse voltage applications. The application of the precipitation layer to internal electrical wiring was also examined. The observation results showed that the silver precipitates developed during reverse voltage application by the electrical reduction of silver ions which were doped with forward voltage application. The reverse voltage application after repeated doping of silver and sodium ions enabled to form multi-layered silver wiring in the glass substrate. We also formed fine internal electrical paths below 0.1 mm of line width by using printed silver nano-ink as a silver ion source.

Research Products

• [Journal Article] 電圧印加を併用した固体イオン交換法によるガラス内部への多層電気伝導路の形成 (2018)
  • Author(s): 鈴木隆太，川村拓史，松坂壮太，比田井洋史，千葉明，森田昇
  • Journal Title: 精密工学会誌 Volume: 印刷中
  • NAID: 130007384341
  • Peer Reviewed / Open Access
• [Presentation] Formation of Buried Electric Circuit in Glass by Metal Doping Using Forward/Reverse Voltage Application (2018)
  • Author(s): Hirofumi Kawamura, Souta Matsusaka, Hirofumi Hidai, Akira Chiba, Noboru Morita
  • Organizer: 2018 International Conference on Smart Science (ICSS 2018)
  • Int'l Joint Research
• [Presentation] 固体イオン交換法によるガラス中での金析出メカニズムの検討とガラスの分離加工への応用 (2018)
  • Author(s): 川村拓史，松坂壮太，比田井洋史，千葉明，森田昇
  • Organizer: 2018年度精密工学会春季大会学術講演会
• [Presentation] Formation of embedded silver wiring in glass substrate by field-assisted solid-state ion exchange (2018)
  • Author(s): Souta Matsusaka, Kawamura Hirofumi, Hidai Hirofumi, Chiba Akira, Morita Noboru
  • Organizer: International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS Processing, Fabrication, Properties, Applications (Thermec2018)
• [Presentation] Formation of multi layer structure in borosilicate glass by electric field-assisted solid-state ion exchange (2017)
  • Author(s): Ryuta Suzuki, Souta Matsusaka, Hirofumi Hidai, Akira Chiba and Noboru Morita
  • Organizer: The 3rd International Conference on Inventions (ICI 2017)
  • Int'l Joint Research
• [Presentation] 順電圧/逆電圧印加を用いたガラス内への金属添加による電気伝導路形成 (2017)
  • Author(s): 川村拓史，松坂壮太，比田井洋史，千葉 明，森田 昇
  • Organizer: 2017年度精密工学会秋季大会学術講演会
• [Presentation] Precipitation process of silver nanowire in borosilicate glass by solid-state ion exchange assisted with forward and reverse electric fields (2016)
  • Author(s): Souta Matsusaka, Hiroki Aoyama, Hirofumi Hidai, Akira Chiba, Noboru Morita
  • Organizer: International Conference on Processing & Manufacturing of Advanced Materials
  • Place of Presentation: Graz, Austria
  • Year and Date: 2016-06-03
  • Int'l Joint Research
• [Presentation] ガラス中での金属層形成に関する研究 (2015)
  • Author(s): 青山拓樹，松坂壮太，比田井洋史，千葉 明，森田 昇
  • Organizer: 2015年精密工学会秋季大会
  • Place of Presentation: 東北大学川内キャンパス
  • Year and Date: 2015-09-06
• [Patent(Industrial Property Rights)] 特許権 (2016)
  • Inventor(s): 松坂壮太，青山拓樹，小髙大樹
  • Industrial Property Rights Holder: 松坂壮太，青山拓樹，小髙大樹
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-253655
  • Filing Date: 2016-12-27