The fabrication of novel chalcopyrite structured semiconductor for high efficiency solar cells

Research Project

Project/Area Number	15K05977
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Multi-year Fund
Section	一般
Research Field	Electronic materials/Electric materials
Research Institution	Gunma University
Principal Investigator	OZAKI Shunji 群馬大学, 大学院理工学府, 准教授 (80302454)
Project Period (FY)	2015-04-01 – 2018-03-31
Project Status	Completed (Fiscal Year 2017)
Budget Amount *help	¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000) Fiscal Year 2017: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000) Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000) Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Keywords	カルコパイライト構造半導体 / 結晶成長
Outline of Final Research Achievements	The CuxAg1-xInS2 crystals were grown by the vertical Bridgman method. The spectroscopic ellipsometry spectra revealed distinct critical points structures. Polarization dependence was observed in the light absorption spectra for AgInS2. Photoreflectance measurements indicate that the lowest bandgap energies show unusual temperature dependence at low temperature. The spin-orbit and crystal-field splitting energies of AgInS2 were determined to be 38 meV and -168 meV at 10 K, respectively.

Report

(4 results)