Two-dimensional characterization of degradation mechanism in metal/wide-bandgap semiconductor contacts by scanning internal photoemission microscopy
| Project/Area Number |
15K05981
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Fukui |
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Principal Investigator |
Shiojima Kenji 福井大学, 学術研究院工学系部門, 教授 (70432151)
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| Co-Investigator(Kenkyū-buntansha) |
橋本 明弘 福井大学, 学術研究院工学系部門, 教授 (10251985)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 金属ー半導体界面 / ワイドバンドギャップ半導体 / 2次元評価 / ショットキー接触 / 欠陥評価 / ショットキー電極 / GaN / SiC / 界面顕微光応答法 / IGZO |
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| Outline of Final Research Achievements |
We have demonstrated that our originally developed two-dimensional characterization method, scanning internal photoemission microscopy, is available to reveal degradation mechanism of metal contacts and surface defects on wide-bandgap semiconductors. We confirmed that this method sensitively characterized an initial stage of the degradation by high-voltage application for GaN, and IGZO Schottky contacts, surface damages induced by ion-implantation and dry etching on GaN and SiC, and large structural defects in GaN and SiC substrates.
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Report
(4 results)
Research Products
(95 results)
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[Book] Semiconductor Process Integration 102017
Author(s)
J. Murota, C. L. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, P. Chin,
Total Pages
309
Publisher
The Electrochemical Society, 65 South Main Street, New Jersey, USA
ISBN
9781623324643
Related Report
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