| Project/Area Number |
15K05981
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Fukui |
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Principal Investigator |
Shiojima Kenji 福井大学, 学術研究院工学系部門, 教授 (70432151)
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| Co-Investigator(Kenkyū-buntansha) |
橋本 明弘 福井大学, 学術研究院工学系部門, 教授 (10251985)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 金属ー半導体界面 / ワイドバンドギャップ半導体 / 2次元評価 / ショットキー接触 / 欠陥評価 / ショットキー電極 / GaN / SiC / 界面顕微光応答法 / IGZO |
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| Outline of Final Research Achievements |
We have demonstrated that our originally developed two-dimensional characterization method, scanning internal photoemission microscopy, is available to reveal degradation mechanism of metal contacts and surface defects on wide-bandgap semiconductors. We confirmed that this method sensitively characterized an initial stage of the degradation by high-voltage application for GaN, and IGZO Schottky contacts, surface damages induced by ion-implantation and dry etching on GaN and SiC, and large structural defects in GaN and SiC substrates.
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