| Project/Area Number |
15K05987
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
Asada Hironori 山口大学, 大学院創成科学研究科, 教授 (70201887)
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| Co-Investigator(Kenkyū-buntansha) |
仙波 伸也 宇部工業高等専門学校, 電気工学科, 教授 (40342555)
岸本 堅剛 山口大学, 大学院創成科学研究科, 助教 (50234216)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 異常ネルンスト効果 / 強磁性半導体 / IV-VI族半導体 |
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| Outline of Final Research Achievements |
The Anomalous Nernst effect have been investigated in ferromagnetic semiconductor (Ge,Mn)Te. From the experimental result of temperature dependence of the thermoelectric voltage caused by the Anomalous Nernst effect, the sign of the thermoelectric voltage was observed in the (Ge,Mn)Te film having good crystallinity. The scattering mechanism was examined by the Anomalous Hall effect and it was found that the side-jump mechanism is dominant as well as (Ga,Mn)As. The Anomalous Nernst effect voltage equation was derived assuming metal because (Ge,Mn)Te is degenerate semiconductor. As a result of comparison with the experimental data, the qualitatively good agreement was obtained in the temperature dependence of the thermoelectric voltage.
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