| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Outline of Final Research Achievements |
Super wide band gap semiconductors such as diamond and gallium oxide are considered to be promising to realize electric devices operating with high power at high frequency toward energy saving society with safe and secure. In this research, we have studied academically on breakthrough semiconductor devices toward high frequency RF input with high power to DC output energy.
At first, maximum RF-DC conversion efficiency at 5 GHz was calculated using material properties and equivalent circuit. For diamond Schottky barrier diode (SBD), very high efficiency of 98 % was expected at high operating voltage of 127 V. Next, diamond SBDs with low resistance were fabricated with NO2 hole doping technique to hydrogen terminated diamond surface. RF-DC conversion using dual diode rectifier circuit was realized for input RF signal with frequency of 10 MHz and peak to peak voltage of 18 V. RF-DC conversion of input RF signal with high peak to peak voltage of 100 V was also obtained at 10 MHz.
|
