| Project/Area Number |
15K05991
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kumamoto University |
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Principal Investigator |
Nakamura Yusui 熊本大学, 大学院先端科学研究部(工), 教授 (00381004)
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| Co-Investigator(Kenkyū-buntansha) |
境 健太郎 宮崎大学, 産学・地域連携センター, 准教授 (20336291)
浪平 隆男 熊本大学, パルスパワー科学研究所, 准教授 (40315289)
山口 敦史 金沢工業大学, 工学部, 教授 (60449428)
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| Co-Investigator(Renkei-kenkyūsha) |
NAGAOKA Shoji 熊本県産業技術センター, 材料地域資源室, 研究主幹 (10227994)
TSUCHIYA Masahiro 独立行政法人情報通信研究機構, 上席研究員 (50183869)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 酸化物半導体 / ミスト化学気相成長法 / 発光ダイオード / 酸化亜鉛 / ミストCVD / LED / ミストＣＶＤ |
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| Outline of Final Research Achievements |
Instead of nitride LED, we have investigated low-cost LED with oxide semiconductors for first demonstration of LED by atmospheric pressure film formation method. For this purpose, we used mist chemical vapor deposition which is operated at atmospheric pressure. As a result, though ZnO-based LED was not yet fabricated, we have established the following procedures toward ZnO-based LED; (1) to (4). (1) Doping method of nitrogen as a p-type dopant. (2) Formation of uniform ZnO thin films by high-speed rotation-type mist-CVD for industrialization of ZnO-based LED. (3) Formation of high-quality ZnO thin films with buffer layers. (4) Epitaxial growth of ZnS thin films emitting blue light.
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