| Project/Area Number |
15K05997
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kanazawa Institute of Technology |
|---|
Principal Investigator |
Endo Kazuhiro 金沢工業大学, 工学研究科, 教授 (50356606)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
有沢 俊一 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (00354340)
|
|---|
| Research Collaborator |
Badica Petre
Kaneko Toshiyuki
Kawai Shinya
Wada Michiaki
|
|---|
| Project Period (FY) |
2015-04-01 – 2019-03-31
|
| Project Status |
Completed (Fiscal Year 2018)
|
| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
|
|---|
| Keywords | ビスマス系超電導体 / 薄膜 / 配向制御 / 非ｃ軸配向 / テラヘルツ発振 / 固有ジョセフソン接合 / プラナー型新構造素子 / MOCVD法 / ビスマス系超伝導体 / エピタキシャル薄膜 / Twin-Free / Ｘ線回折 / テラヘルツ波 / プラナー型新構造THz素子 / 非c軸配向 / 非ｃ軸配向膜 / 非c軸配向膜 |
|---|
| Outline of Final Research Achievements |
A new concept of a THz device was proposed based on the single crystal film of high temperature superconductors (HTS) with a non c-axis orientation. This is a simple planar structure and has a high potential to challenge the performance enhancement of THz devices.
To obtain the non c-axis orientation and excellent quality of the thin films, fabrication was performed by using the ideas of film-substrate lattice matching engineering, “template” or two-temperature growth (growth starts at a low temperature and continues at a higher one), and modification of the 2D layer-by-layer growth to a step-flow growth when vicinal substrates are used. Experiments were conducted on an original, unique, and custom made MOCVD machine and we succeeded in producing superconducting twin-free high-quality (117) Bi-2212 non c-axis epitaxial films. The films are considered suitable for fabrication of novel planar THz devices, but further research is needed.
|
| Academic Significance and Societal Importance of the Research Achievements |
インパクトファクター(IF)の高いMaterials（IF=2.972）など、多数の学術誌で発表。① ガン診断、食品検査、危険物探知など、Ｘ線に替わる非破壊検査法として、「安全で安心な」素子への実用が期待されているTHz波。その最大の問題である「強度問題」を解決する、全く新しい素子構造を提示。② それを実現するために不可欠な、双晶の無い（twin-free）、非c軸配向の高品質Bi-2212エピタキシャル膜の作製の成功。
大型基板単結晶の育成を行い、IFの高い論文誌（Crystal Growth & Design, IF=3.972）で発表。twin-freeの実証：特開2016-222467。
|
