Study of novel III-VI buffer layer for GaAs/Si monolithic solar cells

• Project/Area Number: 15K05998
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Toyota Technological Institute
• Principal Investigator: KOJIMA NOBUAKI 豊田工業大学, 工学(系)研究科(研究院), 助教 (70281491)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2017: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 化合物半導体 / 層状化合物 / エピタキシャル成長 / 結晶成長 / 分子線エピタキシー / エピタキシャルリフトオフ / X線回折 / 結晶欠陥 / ラマン散乱分光 / 電子顕微鏡 / 電子線回折

Outline of Final Research Achievements

Layer structured In2Se3 was grown on GaAs(111) and Si(111) as a novel buffer layer for high quality GaAs growth on Si. The twin crystal formation can be suppressed by use of a vicinal substrate. The GaAs layer can be grown epitaxially on the layer structured In2Se3, though the GaAs layer shows island growth and twin crystal formation. In addition, we successfully demonstrated the peeling off of the epitaxial GaAs layer from the substrate by the cleavage of the layer structured In2Se3.

Research Products

• [Journal Article] Novel Epitaxial GaAs Lift-Off Approach via van der Waals Interface in In2Se3 Buffer Layer (2017)
  • Author(s): Nobuaki Kojima、 Li Wang、 Yoshio Ohshita、 Masafumi Yamaguchi
  • Journal Title: Proceedings of the 33rd European Photovoltaic Solar Energy Conference Volume: - Pages: 1295-1297
  • DOI: 10.4229/EUPVSEC20172017-4CV.4.28
• [Presentation] Novel Epitaxial GaAs Lift-Off Approach via van der Waals Interface in In2Se3 Buffer Layer (2017)
  • Author(s): Nobuaki Kojima、 Li Wang、 Yoshio Ohshita、 Masafumi Yamaguchi
  • Organizer: 33rd European Photovoltaic Solar Energy Conference (EU PVSEC 2017)
  • Int'l Joint Research
• [Presentation] SINGLE DOMAIN GROWTH OF LAYERED In2Se3 ON Si(111) AS AN INTERMEDIATE BUFFER LAYER IN GaAs ON Si (2017)
  • Author(s): Nobuaki Kojima、 Li Wang、 Yoshio Ohshita、 Masafumi Yamaguchi
  • Organizer: The 27th Photovoltaic Science and Engineering Conference (PVSEC-27)
  • Int'l Joint Research
• [Presentation] Optical properties of layered (InxGa1-x)2Se3 buffer material deposited on GaAs(111) substrate for III-V/Silicon solar cell (2015)
  • Author(s): Li Wang, Hiroya Nakamura, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi
  • Organizer: 25th International Photovoltaic Science & Engineering Conference (PVSEC-25)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2015-11-17
  • Int'l Joint Research
• [Presentation] Suppression of Twin Formation in Layered In2Se3 Grown on GaAs(111) (2015)
  • Author(s): Nobuaki Kojima, Hiroya Nakamura, Yoshio Ohshita, Masafumi Yamaguchi
  • Organizer: 42th IEEE Photovoltaic Specialists Conference (PVSC42)
  • Place of Presentation: New Orleans, USA
  • Year and Date: 2015-06-16
  • Int'l Joint Research
• [Presentation] Layered (InxGa1-x)2Se3 (III2-VI3) Compounds as Novel Buffer Layers for GaAs on Si System (2015)
  • Author(s): Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi
  • Organizer: The Energy, Materials, and Nanotechnology (EMN) Meeting
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2015-06-10
  • Int'l Joint Research / Invited