| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
Polarity-controllable transistors are expected to reduce the power consumption in LSIs, and for the realization of such devices, both electrons and holes must be injected into the intrinsic semiconductor channels from metal contact electrodes. For this purpose, we focused on alpha-phase molybdenum ditelluride (MoTe2), a transition metal dichalcogenide semiconductor. It was found that in MoTe2 the Fermi level pinning effect is much weaker than other semiconducting materials, and therefore, the type of injected carriers from Schottky junction can be changed by changing the metal of contacts. As a result, the unbalance of drive currents in n- and p-type modes of polarity-controllable transistors will be overcome.
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