| Project/Area Number |
15K06013
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
Asubar Joel 福井大学, テニュアトラック推進本部, 講師 (10574220)
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| Co-Investigator(Kenkyū-buntansha) |
葛原 正明 福井大学, 学術研究院工学系部門, 教授 (20377469)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | Gallium nitride / current collapse / power device / semiconductor / AlGaN/GaN HEMT / AlGaN/GaN / HEMT / Current Collapse / Breakdown Voltage / Stability / AlGaN-GaN / 窒化物半導体 / 電流コラプス / MIS / GaN / パワーデバイス / 自己発熱 / 多重台形チャネル / 酸素プラズマ処理 |
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| Outline of Final Research Achievements |
Our aim is to achieve improved stability and reliability of AlGaN/GaN HEMTs using structure-based strategies such as using the so-called multi-mesa-channel. Investigations have revealed that the MMC HEMT is highly resistant to current collapse and other instabilities, making it a leading power electronics prospect. We also investigated other current collapse approaches that can be used in conjunction with MMC in the future such as high pressure water vapor annealing, oxygen plasma treatment, field-plate and metal-insulator-semiconductor structures.
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