Identification of Local Current Leakage Location for Mechanism of Leak Current in GaN Transistors
| Project/Area Number |
15K06014
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Wakejima Akio 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80588575)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 窒化物半導体 / トランジスタ / リーク電流 / AFM / 電流AFM / AlGaN/GaN HEMT / 欠陥 / 転位 / 原子間力顕微鏡 / 透過型電子顕微鏡 |
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| Outline of Final Research Achievements |
Local leakage current of GaN/Si transistors were evaluated. Instead of a metal based electrode, a transparent ITO base electrode was fabricated for the gate, with which we can observed current base emission through the gate electrode.
Relationship between amounts of leakage current and number of photos of emission. Also, from cross-sectional STEM observation just under the gate where emission occurred, we found there are unexpected disordered epitaxial growth at the very deep area of the epitaxial structure.
For the purpose of leakage current observation at the non-metalized GaN based epitaxial structure, nano-current was successfully observed using an AFM equipment. The location of the leakage current was not found to be related to the surface morphology of the sample.
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Report
(4 results)
Research Products
(2 results)
