| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
Local leakage current of GaN/Si transistors were evaluated. Instead of a metal based electrode, a transparent ITO base electrode was fabricated for the gate, with which we can observed current base emission through the gate electrode.
Relationship between amounts of leakage current and number of photos of emission. Also, from cross-sectional STEM observation just under the gate where emission occurred, we found there are unexpected disordered epitaxial growth at the very deep area of the epitaxial structure.
For the purpose of leakage current observation at the non-metalized GaN based epitaxial structure, nano-current was successfully observed using an AFM equipment. The location of the leakage current was not found to be related to the surface morphology of the sample.
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