| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
To realize the optical interconnection technology, we have studied the integration of III-V quantum dots laser on silicon substrate. We have applied our proposal methods, that is, crystal growth of III-V semiconductor device layers using directly bonded thin-film InP and silicon substrate. 1.5μm wavelength GaInAsP double-heterostructure was grown by metal-organic vapor phase epitaxy, and fabricated fabry-perot laser. We have obtained room temperature pulse lasing, and the threshold current density was almost the same with the laser on InP substrate. Furthermore, we have grown the quantum dots structure on silicon substrate, and obtained the output optical power by injection current.
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