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Conductance quantization in oxide thin films used for resistive switching memory and its application to multi-level data storage

Research Project

Project/Area Number 15K06435
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTokyo Institute of Technology

Principal Investigator

Tadashi Shiota  東京工業大学, 物質理工学院, 助教 (40343165)

Co-Investigator(Kenkyū-buntansha) 篠崎 和夫  東京工業大学, 物質理工学院, 教授 (00196388)
Project Period (FY) 2015-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Keywords抵抗変化型メモリ / 量子化伝導 / 酸化物薄膜 / 微構造 / 結晶性 / 多値化 / 抵抗スイッチング
Outline of Final Research Achievements

Effect of quality of oxide thin film on resistive switching and conductance quantization properties was studied in two types of resistive switching memory devices, conductive bridging RAM (CBRAM) and valence change memory (VCM). In the CBRAM having Cu or Ag/TaOx thin film/Pt structure, although the resistive switching behavior was not influenced by microstructure of the TaOx thin film, the conductance quantization was most frequently observed in the TaOx film with nano-porous structure. In the VCM having Au/Y2O3-doped ZrO2 (YSZ)/Si structure, 8mol%YSZ epitaxial thin films showed superior resistive switching property. Moreover, the conductance quantization was more frequently observed in the epitaxial thin film.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • 2015 Research-status Report
  • Research Products

    (7 results)

All 2018 2017 2016 2015

All Presentation (7 results) (of which Invited: 1 results)

  • [Presentation] Si微細加工によるPt-Pd/(Y2O3添加ZrO2単結晶薄膜)/Pt-Pd構造の作製とその抵抗スイッチング特性2018

    • Author(s)
      二ツ森皓史、塩田忠、西岡國生、松谷晃宏、多田大、西山昭雄、篠崎和夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Y2O3添加ZrO2薄膜を用いた抵抗変化型メモリ素子における量子化伝導の発現2017

    • Author(s)
      二ツ森 皓史, 白田 稜, 塩田 忠, 西山 昭雄, 篠崎 和夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] 抵抗スイッチングを示す酸化物薄膜における伝導度の量子化2016

    • Author(s)
      塩田忠、久保朋也、白田稜、櫻井修、篠崎和夫
    • Organizer
      第26回日本MRS年次大会
    • Place of Presentation
      横浜市開港記念会館
    • Year and Date
      2016-12-19
    • Related Report
      2016 Research-status Report
    • Invited
  • [Presentation] PLD法によりSi基板上に製膜したY2O3安定化ZrO2薄膜の抵抗スイッチング2016

    • Author(s)
      塩田忠、白田稜、二ツ森皓史、西山昭雄、櫻井修、篠崎和夫
    • Organizer
      第36回エレクトロセラミックス研究討論会
    • Place of Presentation
      ユニオンビル(富士通労働会館)
    • Year and Date
      2016-10-13
    • Related Report
      2016 Research-status Report
  • [Presentation] 酸化タンタル薄膜の微構造と抵抗スイッチング時に生じる伝導度の量子化の関係2016

    • Author(s)
      塩田忠、久保朋也、西山昭雄、櫻井修、篠崎和夫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] 抵抗変化型メモリ用Ta2O5薄膜の微構造が量子化伝導の発現に及ぼす影響2016

    • Author(s)
      久保朋也、白田稜、南宏明、塩田忠、西山昭雄、櫻井修、篠崎和夫
    • Organizer
      日本セラミックス協会2016年年会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2016-03-14
    • Related Report
      2015 Research-status Report
  • [Presentation] 抵抗スイッチング現象を示すTa2O5薄膜の膜質が伝導度の量子化に及ぼす影響2015

    • Author(s)
      久保朋也、南宏明、白田稜、塩田忠、西山昭雄、櫻井修、篠崎和夫
    • Organizer
      第35回エレクトロセラミックス研究討論会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2015-10-22
    • Related Report
      2015 Research-status Report

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Published: 2015-04-16   Modified: 2019-03-29  

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