| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Outline of Final Research Achievements |
In this project, the preparation method and the formation mechanism of oxide eutectic environmental barrier coating layer containing HfO2 as an edge member on the silicon carbide substrate are developed. In one model, Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. The components of Al2O3 also react with the free carbon and vaporized as AlO from the molten phase. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate, then a high density intermediate layer is formed. The Al2O3-HfO2 eutectic structure grow from the top of the intermediate layer.
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