| Project/Area Number |
15K06446
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Sendai National College of Technology |
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Principal Investigator |
Seki Shigeyuki 仙台高等専門学校, 総合工学科, 准教授 (50449378)
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| Co-Investigator(Kenkyū-buntansha) |
末永 貴俊 仙台高等専門学校, 総合工学科, 准教授 (90380998)
佐藤 友章 仙台高等専門学校, 総合工学科, 教授 (70261584)
内田 孝幸 東京工芸大学, 工学部, 教授 (80203537)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | ナノミスト堆積法 / 傾斜機能構造 / 組成制御 / ミスト放出時混合 / 透明導電膜 / スズ添加酸化インジウム / 酸化インジウム / 酸化スズ / ナノミスト成膜装置 / 溶液調製時混合方式 / スズ添加 |
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| Outline of Final Research Achievements |
In this present study, we have fabricated a novel nano-mist CVD apparatus with two channels and developed a software that could be controlled the composition ratio of the both mist of In2O3 and SnO2 thin films preparing solution, and also succeeded in preparing In-Sn-O system thin films controlled the composition of In and Sn.
Subsequently, In2O3 thin films of 120 nm thickness were deposited on the substrate along an original deposition time chart related to dynamic composition control. By this mixture method upon mist discharge, we succeeded in accumulating the 120-nm-thick In-Sn-O system thin film, with the composition gradually inclined from 0 to 12 at.% Sn, on this In2O3 thin film.
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