| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
In Cu2ZnSnS4 (CZTS) thin films sputter deposition, the combination of the use of hot reflector-wall and the H2 addition to Ar discharge gas was investigated. The band gap range of the CZTS thin films deposited in Ar+10% H2 was 1.4 to 1.5 eV, which was narrower than that of the films deposited using Ar. It was concluded that the combination of the use of hot reflector wall and the H2 addition to Ar the H2 addition to Ar was effective and appropriate to suppress the formation of anion defect and narrowing the band-gap. In MgF2 thin films deposition by magnetron sputtering, the effectiveness of negative bias voltage applied to a double-grid electrode on increase in film deposition rate and suppression of optical adsorption has been examined. The optical absorption coefficient was reduced to <2×10E-4 nm-1 in the visible range and the refractive index became <1.40. Film deposition rate was increased to >10 nm/min from < 1nm/min by applying a retarding voltage of -30 to -500 V.
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