| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
Extreme-ultraviolet (EUV) lithography has attracted attention as the most up-to-date semiconductor mass production technology using an ionizing radiation. In the resist material, the radiation chemical reaction is induced by ionization after the exposure and then the solubility in the developer is changed. Although the dynamics of charges in the resist after ionization is important for nanolithography, details have been not yet clarified. In this study, we tried to clarify the behavior of excess charges in the aromatic molecule which is the main component of the resist by using the electron beam pulse radiolysis method etc. We also proposed a new method to improve resist performance.
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