Aharonov-Bohm effect in optically functional Type-I semiconductor quantum structures
Project/Area Number |
15K13267
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Nanostructural physics
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Research Institution | Hokkaido University |
Principal Investigator |
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Project Period (FY) |
2015-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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Keywords | 半導体量子ドット / アハラノフボーム効果 / GaAs量子リング / 発光スペクトル磁場依存性 / 量子リング / 磁場中発光スペクトル / 量子ドット / 発光スペクトル |
Outline of Final Research Achievements |
We study the Aharonov-Bohm (AB) effect, that is an interference phenomenon caused by coherent phase difference of electron- and hole-wavefunctions, in Type-I semiconductor quantum dots (QDs) suitable for optical device applications. Optical detection of the AB effect has been limited to core-shell type-II QDs so far. Therefore, we aimed to obtain knowledge about the AB effect in the Type-I QDs by using quantum ring samples combining type-I GaAs QDs grown by droplet epitaxy, utilizing the one-dimensional nature of the wavefunctions in the ring direction. Magnetic-field dependences of the emission spectrum from a single quantum ring are measured by micro-photoluminescence spectroscopy under magnetic fields up to 5 T, and investigations are conducted in consideration of the Zeeman shift induced by the magnetic field.
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Report
(3 results)
Research Products
(4 results)