| Project/Area Number |
15K13277
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | Aoyama Gakuin University |
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Principal Investigator |
Junji Haruyama 青山学院大学, 理工学部, 准教授 (70296383)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | スピントロニクス / 二次元原子層 / スピン軌道相互作用 / トポロジカル絶縁体 / グラフェン / 二次元トポロジカル絶縁体 / ナノ微粒子修飾 / スピンホール効果 / 水素修飾 / フッ素修飾 |
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| Outline of Final Research Achievements |
Spintronics is attracting significant attention as one way of next-generation electronics. In particular, spin-orbit interaction (SOI) is key for creation of various physical phenomena and its device application. Materials with SOI can also become topological insulator (TI). On the other hand, two-dimensional (2D) mono-atomic layer ”graphene” consists of small-mass atom, carbon. Thus, it is difficult to introduce SOI and TI. In the present study, I have decorated graphene surface with large-mass atom particles (platinum (Pt) and bismuth telluride (Bi2Te3)) with small amount and introduced SOI (or spin Hall effect) into graphene with 10 meV order. Moreover, I have found unique integer fraction in quantum resistance of Bi2Te3-decorated graphene, which can be associated with 2D TI, by observing non-local resistance. The mechanism is still under investigation.
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