Low-temperature crystal growth/connection of metal-oxide nanocrystals toward printed electronics
Project/Area Number |
15K13280
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
Allocation Type | Multi-year Fund |
Research Field |
Nanomaterials chemistry
|
Research Institution | Yamagata University |
Principal Investigator |
|
Project Period (FY) |
2015-04-01 – 2018-03-31
|
Project Status |
Completed (Fiscal Year 2017)
|
Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
|
Keywords | 無機半導体 / 金属酸化物 / 金属ハライド / 低温・溶液プロセス / 金属カルコゲン / ナノ結晶 / 溶液プロセス / 薄膜 / 低温溶融塩 / 結晶界面 / 低温結晶成長 / プリンテッドエレクトロニクス |
Outline of Final Research Achievements |
Perovskite solar cells have drastically progressed with respect to the photocurrent quantum efficiencies of more than 20%. Moreover, the perovskite layers have been advantageously prepared via low-temperature solution processes. Toward all solution-processed solar cells, solution-processed n- and p-type inorganic semiconductor thin-films controlled by nanometer thickness become a crucial key technology. In this study, mechanism on the low-temperature (150°C) crystal growth/interfacial connection of ZnO (n-type semiconductor) nanocrystals using a low-temperature flux has been elucidated. Crack and void-less nano-films of CuI and CuSCN (p-type semiconductor) have been successfully fabricated via a low-temperature (150°C) solution process. In this process, alcohol solvents are utilized to prepare the precursor solutions of CuI and CuSCN.
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Report
(4 results)
Research Products
(6 results)