Development of digital etching of 2D layered materials using the inward plasma method
| Project/Area Number |
15K13310
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Miyawaki Jun 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 主任研究員 (20358138)
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| Co-Investigator(Kenkyū-buntansha) |
久保 利隆 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 研究グループ長 (70344124)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 二次元層状物質 / プラズマ / エッチング |
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| Outline of Final Research Achievements |
Two-dimensional layered materials, such as graphene and transition metal chalcogenides, have recently attracted much attention as materials for next-generation nano-electronic devices. Such materials usually perform novel functions when fabricated as atomically flat mono- or a few- layer samples. For fabrication of electronic devices, it is thus essential to control their thickness with layer-by-layer manners. We have attempted to develop a digital-etching technique of such materials by using our novel inward-plasma technique. For molybdenum disulfide, terrace region with micrometer order was fabricated, which may be used for electronic devices in the lab.
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Report
(3 results)
Research Products
(18 results)
